Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first order quantum correction term is considered in the...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c7 |
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