Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obt...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ad677d66093a4ae397435458cecfe9eb |
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| Sumario: | The concentration dependences of unit cell parameter a, width of diffraction reflections
B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier
mobility m, and thermoelectric power factor P = S2
×s for the Pb1-xBixTe (x = 0¸0.05) alloys
were obtained. A non-monotonic character of the concentration dependences of properties
was detected and attributed to a change in the defect formation in the PbTe-BiTe system
under increasing BiTe concentration.
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