Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions

The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obt...

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Autores principales:	Tavrina, T., Rogaceva, E., Pinegin, V.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/ad677d66093a4ae397435458cecfe9eb
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spelling	oai:doaj.org-article:ad677d66093a4ae397435458cecfe9eb2021-11-21T12:11:13ZStructural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions2537-63651810-648Xhttps://doaj.org/article/ad677d66093a4ae397435458cecfe9eb2005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3311https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obtained. A non-monotonic character of the concentration dependences of properties was detected and attributed to a change in the defect formation in the PbTe-BiTe system under increasing BiTe concentration. Tavrina, T.Rogaceva, E.Pinegin, V.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 430-434 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Tavrina, T. Rogaceva, E. Pinegin, V. Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
description	The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obtained. A non-monotonic character of the concentration dependences of properties was detected and attributed to a change in the defect formation in the PbTe-BiTe system under increasing BiTe concentration.
format	article
author	Tavrina, T. Rogaceva, E. Pinegin, V.
author_facet	Tavrina, T. Rogaceva, E. Pinegin, V.
author_sort	Tavrina, T.
title	Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
title_short	Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
title_full	Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
title_fullStr	Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
title_full_unstemmed	Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
title_sort	structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/ad677d66093a4ae397435458cecfe9eb
work_keys_str_mv	AT tavrinat structuralthermoelectricandgalvanomagneticpropertiesofpbtebitesemiconductorsolidsolutions AT rogacevae structuralthermoelectricandgalvanomagneticpropertiesofpbtebitesemiconductorsolidsolutions AT pineginv structuralthermoelectricandgalvanomagneticpropertiesofpbtebitesemiconductorsolidsolutions
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Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions

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