Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
Optoelectronics: tunneling photodetectors break the trade-off between speed and responsivity Graphene-based photodetectors with an embedded MoS2 tunnel layer show remarkable responsivities, whilst still retaining fast response times. A team led by Jian-Bin Xu at the Chinese University of Hong Kong t...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ad84ada2008b4f7b9389277c76aa694a |
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| Sumario: | Optoelectronics: tunneling photodetectors break the trade-off between speed and responsivity Graphene-based photodetectors with an embedded MoS2 tunnel layer show remarkable responsivities, whilst still retaining fast response times. A team led by Jian-Bin Xu at the Chinese University of Hong Kong tackled the trade-off between speed and responsivity by intercalating two-dimensional MoS2 into a graphene photodetector. This results in the formation of a hybrid tunneling photoconductor, where silicon plays the role of optically active layer, whereas MoS2 serves as tunneling layer. The insertion of ultra-thin MoS2 enables fast transfer of the photo-excited carriers in silicon towards graphene, whilst also passivating surface states. This approach effectively bypasses the speed limitations caused by the long lifetime of trapped interfacial carriers, resulting in a remarkable 17 ns response time and a high, broadband responsivity up to 3 × 104 A/W. |
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