Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity

Optoelectronics: tunneling photodetectors break the trade-off between speed and responsivity Graphene-based photodetectors with an embedded MoS2 tunnel layer show remarkable responsivities, whilst still retaining fast response times. A team led by Jian-Bin Xu at the Chinese University of Hong Kong t...

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Autores principales:	Li Tao, Zefeng Chen, Xinming Li, Keyou Yan, Jian-Bin Xu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/ad84ada2008b4f7b9389277c76aa694a
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spelling	oai:doaj.org-article:ad84ada2008b4f7b9389277c76aa694a2021-12-02T13:41:45ZHybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity10.1038/s41699-017-0016-42397-7132https://doaj.org/article/ad84ada2008b4f7b9389277c76aa694a2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0016-4https://doaj.org/toc/2397-7132Optoelectronics: tunneling photodetectors break the trade-off between speed and responsivity Graphene-based photodetectors with an embedded MoS2 tunnel layer show remarkable responsivities, whilst still retaining fast response times. A team led by Jian-Bin Xu at the Chinese University of Hong Kong tackled the trade-off between speed and responsivity by intercalating two-dimensional MoS2 into a graphene photodetector. This results in the formation of a hybrid tunneling photoconductor, where silicon plays the role of optically active layer, whereas MoS2 serves as tunneling layer. The insertion of ultra-thin MoS2 enables fast transfer of the photo-excited carriers in silicon towards graphene, whilst also passivating surface states. This approach effectively bypasses the speed limitations caused by the long lifetime of trapped interfacial carriers, resulting in a remarkable 17 ns response time and a high, broadband responsivity up to 3 × 104 A/W.Li TaoZefeng ChenXinming LiKeyou YanJian-Bin XuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Li Tao Zefeng Chen Xinming Li Keyou Yan Jian-Bin Xu Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
description	Optoelectronics: tunneling photodetectors break the trade-off between speed and responsivity Graphene-based photodetectors with an embedded MoS2 tunnel layer show remarkable responsivities, whilst still retaining fast response times. A team led by Jian-Bin Xu at the Chinese University of Hong Kong tackled the trade-off between speed and responsivity by intercalating two-dimensional MoS2 into a graphene photodetector. This results in the formation of a hybrid tunneling photoconductor, where silicon plays the role of optically active layer, whereas MoS2 serves as tunneling layer. The insertion of ultra-thin MoS2 enables fast transfer of the photo-excited carriers in silicon towards graphene, whilst also passivating surface states. This approach effectively bypasses the speed limitations caused by the long lifetime of trapped interfacial carriers, resulting in a remarkable 17 ns response time and a high, broadband responsivity up to 3 × 104 A/W.
format	article
author	Li Tao Zefeng Chen Xinming Li Keyou Yan Jian-Bin Xu
author_facet	Li Tao Zefeng Chen Xinming Li Keyou Yan Jian-Bin Xu
author_sort	Li Tao
title	Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
title_short	Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
title_full	Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
title_fullStr	Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
title_full_unstemmed	Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
title_sort	hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ad84ada2008b4f7b9389277c76aa694a
work_keys_str_mv	AT litao hybridgraphenetunnelingphotoconductorwithinterfaceengineeringtowardsfastphotoresponseandhighresponsivity AT zefengchen hybridgraphenetunnelingphotoconductorwithinterfaceengineeringtowardsfastphotoresponseandhighresponsivity AT xinmingli hybridgraphenetunnelingphotoconductorwithinterfaceengineeringtowardsfastphotoresponseandhighresponsivity AT keyouyan hybridgraphenetunnelingphotoconductorwithinterfaceengineeringtowardsfastphotoresponseandhighresponsivity AT jianbinxu hybridgraphenetunnelingphotoconductorwithinterfaceengineeringtowardsfastphotoresponseandhighresponsivity
_version_	1718392574757044224

Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity

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