Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

Abstract Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carrier...

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Autores principales:	Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Keita Nomoto, Dirk König
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ad8bc64d60524ad39a69746d9678625a
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spelling	oai:doaj.org-article:ad8bc64d60524ad39a69746d9678625a2021-12-02T15:05:33ZDefect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size10.1038/s41598-017-01001-12045-2322https://doaj.org/article/ad8bc64d60524ad39a69746d9678625a2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01001-1https://doaj.org/toc/2045-2322Abstract Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110–260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.Daniel HillerJulian López-VidrierSebastian GutschMargit ZachariasKeita NomotoDirk KönigNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Keita Nomoto Dirk König Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
description	Abstract Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110–260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.
format	article
author	Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Keita Nomoto Dirk König
author_facet	Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Keita Nomoto Dirk König
author_sort	Daniel Hiller
title	Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
title_short	Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
title_full	Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
title_fullStr	Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
title_full_unstemmed	Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
title_sort	defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/ad8bc64d60524ad39a69746d9678625a
work_keys_str_mv	AT danielhiller defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize AT julianlopezvidrier defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize AT sebastiangutsch defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize AT margitzacharias defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize AT keitanomoto defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize AT dirkkonig defectinducedluminescencequenchingvschargecarriergenerationofphosphorusincorporatedinsiliconnanocrystalsasfunctionofsize
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Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

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