Antisymmetric linear magnetoresistance and the planar Hall effect
Magnetoresitance (MR) is a tool to study electronic transport and spin order in metals. Here, the authors demonstrate two different microscopic origins of antisymmetric linear MR from both Zeeman-split Fermi surface and anomalous electron velocity.
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Autores principales: | Yishu Wang, Patrick A. Lee, D. M. Silevitch, F. Gomez, S. E. Cooper, Y. Ren, J.-Q. Yan, D. Mandrus, T. F. Rosenbaum, Yejun Feng |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
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Materias: | |
Acceso en línea: | https://doaj.org/article/adbcb36c54c24e11af84f0b1015030c5 |
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