Field-free magnetization reversal by spin-Hall effect and exchange bias

Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitat...

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Auteurs principaux:	A. van den Brink, G. Vermijs, A. Solignac, J. Koo, J. T. Kohlhepp, H. J. M. Swagten, B. Koopmans
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2016
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/addeb55889eb4abe91dbe941002fd3cf
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id	oai:doaj.org-article:addeb55889eb4abe91dbe941002fd3cf
record_format	dspace
spelling	oai:doaj.org-article:addeb55889eb4abe91dbe941002fd3cf2021-12-02T14:39:32ZField-free magnetization reversal by spin-Hall effect and exchange bias10.1038/ncomms108542041-1723https://doaj.org/article/addeb55889eb4abe91dbe941002fd3cf2016-03-01T00:00:00Zhttps://doi.org/10.1038/ncomms10854https://doaj.org/toc/2041-1723Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitations.A. van den BrinkG. VermijsA. SolignacJ. KooJ. T. KohlheppH. J. M. SwagtenB. KoopmansNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans Field-free magnetization reversal by spin-Hall effect and exchange bias
description	Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitations.
format	article
author	A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans
author_facet	A. van den Brink G. Vermijs A. Solignac J. Koo J. T. Kohlhepp H. J. M. Swagten B. Koopmans
author_sort	A. van den Brink
title	Field-free magnetization reversal by spin-Hall effect and exchange bias
title_short	Field-free magnetization reversal by spin-Hall effect and exchange bias
title_full	Field-free magnetization reversal by spin-Hall effect and exchange bias
title_fullStr	Field-free magnetization reversal by spin-Hall effect and exchange bias
title_full_unstemmed	Field-free magnetization reversal by spin-Hall effect and exchange bias
title_sort	field-free magnetization reversal by spin-hall effect and exchange bias
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/addeb55889eb4abe91dbe941002fd3cf
work_keys_str_mv	AT avandenbrink fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT gvermijs fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT asolignac fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT jkoo fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT jtkohlhepp fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT hjmswagten fieldfreemagnetizationreversalbyspinhalleffectandexchangebias AT bkoopmans fieldfreemagnetizationreversalbyspinhalleffectandexchangebias
_version_	1718390611095060480

Field-free magnetization reversal by spin-Hall effect and exchange bias

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