Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filamen...

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Autores principales:	Andrey N. Aleshin, Nikolay V. Zenchenko, Oleg A. Ruban
Formato:	article
Lenguaje:	EN
Publicado:	Pensoft Publishers 2021
Materias:	Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/aebbeca070014f39b435fdb32e7f81e8
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spelling	oai:doaj.org-article:aebbeca070014f39b435fdb32e7f81e82021-11-24T04:30:52ZSimulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness10.3897/j.moem.7.2.732892452-1779https://doaj.org/article/aebbeca070014f39b435fdb32e7f81e82021-06-01T00:00:00Zhttps://moem.pensoft.net/article/73289/download/pdf/https://moem.pensoft.net/article/73289/download/xml/https://moem.pensoft.net/article/73289/https://doaj.org/toc/2452-1779The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x &lt; 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I–V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.Andrey N. AleshinNikolay V. ZenchenkoOleg A. RubanPensoft PublishersarticleElectronicsTK7800-8360ENModern Electronic Materials, Vol 7, Iss 2, Pp 45-51 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360
spellingShingle	Electronics TK7800-8360 Andrey N. Aleshin Nikolay V. Zenchenko Oleg A. Ruban Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
description	The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x &lt; 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I–V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.
format	article
author	Andrey N. Aleshin Nikolay V. Zenchenko Oleg A. Ruban
author_facet	Andrey N. Aleshin Nikolay V. Zenchenko Oleg A. Ruban
author_sort	Andrey N. Aleshin
title	Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
title_short	Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
title_full	Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
title_fullStr	Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
title_full_unstemmed	Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
title_sort	simulation of tin/hfo2/pt memristor i–v curve for different conductive filament thickness
publisher	Pensoft Publishers
publishDate	2021
url	https://doaj.org/article/aebbeca070014f39b435fdb32e7f81e8
work_keys_str_mv	AT andreynaleshin simulationoftinhfo2ptmemristorivcurvefordifferentconductivefilamentthickness AT nikolayvzenchenko simulationoftinhfo2ptmemristorivcurvefordifferentconductivefilamentthickness AT olegaruban simulationoftinhfo2ptmemristorivcurvefordifferentconductivefilamentthickness
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Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

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