Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filamen...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Pensoft Publishers
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/aebbeca070014f39b435fdb32e7f81e8 |
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