MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS

Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-b...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Y. O. Onikienko, V. V. Pilinsky, P. V. Popovych, V. S. Lazebnyi, O. I. Smolenska, V. S. Baran
Formato:	article
Lenguaje:	EN RU UK
Publicado:	National Technical University "Kharkiv Polytechnic Institute" 2020
Materias:	gan transistors computer simulation electromagnetics interferences energy efficiency Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/af39a8ba55b04192b1db6b0924b8fd93
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:af39a8ba55b04192b1db6b0924b8fd93
record_format	dspace
spelling	oai:doaj.org-article:af39a8ba55b04192b1db6b0924b8fd932021-12-02T15:29:19ZMODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS10.20998/2074-272X.2020.3.062074-272X2309-3404https://doaj.org/article/af39a8ba55b04192b1db6b0924b8fd932020-06-01T00:00:00Zhttp://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06/206285https://doaj.org/toc/2074-272Xhttps://doaj.org/toc/2309-3404Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-bridge converter built on the EPC2022 eGaN® transistors and contains a driver for controlling these transistors. To simplify the assessment of the conversion efficiency, it is suggested to use a computer model of the development board and LISN, which simulates the active load with the LC filter. Results. Simulation results of the converter efficiency with the nominal values of the elements according to the EPC9035 manual showed significant deviations from the calculated values at frequencies above 50 kHz. This is explained by the presence of inrush current through transistors. The inrush current depends on the «dead time» between the intervals when the transistors are open and the delays specified in the SPICE model of LM5113 driver. To reduce the amplitude of inrush current and, accordingly, to increase the duration of the «dead time» interval, it is proposed to double the capacitors responsible for the formation of this interval. Simulation of the converter efficiency with the doubled values of the circuit elements showed that the results almost coincide with the calculated values of the efficiency in the range from 0.05 MHz to 5 MHz. The converter on the EPC2022 transistors has the highest efficiency at 50 kHz which decreases by 0.03-0.04 at 500 kHz. Therefore, it is recommended that the operating frequency should be set close to 500 kHz. Simulation of EMI levels resulted that the difference in the duration of the «dead time» does not have a significant effect on the levels of simulated EMI. The largest difference between the simulation results and the experiment is observed at frequencies about 30 MHz and is 3-6 dB. Originality. For the first time, the computer model was used to calculate the efficiency of a half-bridge converter on GaN transistors at different frequencies. Practical significance. Considering the high output current, high operating voltage and short switching times, GaN transistors are promising for use in pulse generators, power supplies with operating frequencies exceeding 500 kHz, and in powerful Class D hi-fi amplifiers with small dimensions, such as automotive ones. Y. O. OnikienkoV. V. PilinskyP. V. PopovychV. S. LazebnyiO. I. SmolenskaV. S. BaranNational Technical University "Kharkiv Polytechnic Institute"articlegan transistorscomputer simulationelectromagnetics interferencesenergy efficiencyElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENRUUKElectrical engineering & Electromechanics, Iss 3, Pp 37-42 (2020)
institution	DOAJ
collection	DOAJ
language	EN RU UK
topic	gan transistors computer simulation electromagnetics interferences energy efficiency Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	gan transistors computer simulation electromagnetics interferences energy efficiency Electrical engineering. Electronics. Nuclear engineering TK1-9971 Y. O. Onikienko V. V. Pilinsky P. V. Popovych V. S. Lazebnyi O. I. Smolenska V. S. Baran MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
description	Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-bridge converter built on the EPC2022 eGaN® transistors and contains a driver for controlling these transistors. To simplify the assessment of the conversion efficiency, it is suggested to use a computer model of the development board and LISN, which simulates the active load with the LC filter. Results. Simulation results of the converter efficiency with the nominal values of the elements according to the EPC9035 manual showed significant deviations from the calculated values at frequencies above 50 kHz. This is explained by the presence of inrush current through transistors. The inrush current depends on the «dead time» between the intervals when the transistors are open and the delays specified in the SPICE model of LM5113 driver. To reduce the amplitude of inrush current and, accordingly, to increase the duration of the «dead time» interval, it is proposed to double the capacitors responsible for the formation of this interval. Simulation of the converter efficiency with the doubled values of the circuit elements showed that the results almost coincide with the calculated values of the efficiency in the range from 0.05 MHz to 5 MHz. The converter on the EPC2022 transistors has the highest efficiency at 50 kHz which decreases by 0.03-0.04 at 500 kHz. Therefore, it is recommended that the operating frequency should be set close to 500 kHz. Simulation of EMI levels resulted that the difference in the duration of the «dead time» does not have a significant effect on the levels of simulated EMI. The largest difference between the simulation results and the experiment is observed at frequencies about 30 MHz and is 3-6 dB. Originality. For the first time, the computer model was used to calculate the efficiency of a half-bridge converter on GaN transistors at different frequencies. Practical significance. Considering the high output current, high operating voltage and short switching times, GaN transistors are promising for use in pulse generators, power supplies with operating frequencies exceeding 500 kHz, and in powerful Class D hi-fi amplifiers with small dimensions, such as automotive ones.
format	article
author	Y. O. Onikienko V. V. Pilinsky P. V. Popovych V. S. Lazebnyi O. I. Smolenska V. S. Baran
author_facet	Y. O. Onikienko V. V. Pilinsky P. V. Popovych V. S. Lazebnyi O. I. Smolenska V. S. Baran
author_sort	Y. O. Onikienko
title	MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
title_short	MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
title_full	MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
title_fullStr	MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
title_full_unstemmed	MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
title_sort	modelling of operation modes and electromagnetic interferences of gan-transistor converters
publisher	National Technical University "Kharkiv Polytechnic Institute"
publishDate	2020
url	https://doaj.org/article/af39a8ba55b04192b1db6b0924b8fd93
work_keys_str_mv	AT yoonikienko modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters AT vvpilinsky modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters AT pvpopovych modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters AT vslazebnyi modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters AT oismolenska modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters AT vsbaran modellingofoperationmodesandelectromagneticinterferencesofgantransistorconverters
_version_	1718387162275119104

MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS

Ejemplares similares