Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge. However, the dynamics for carrier tunneling to control the interface emission is still a mystery. Herein, th...

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Autores principales:	Wei Liu, Zhuxin Li, Zengliang Shi, Ru Wang, Yizhi Zhu, Chunxiang Xu
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2021
Materias:	tunneling electron light-emitting diode heterojunctional interface nano hfo2 buffer Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/af6f9311ffae4d8fbc7a9c86abf7933a
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id	oai:doaj.org-article:af6f9311ffae4d8fbc7a9c86abf7933a
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spelling	oai:doaj.org-article:af6f9311ffae4d8fbc7a9c86abf7933a2021-11-17T07:53:30ZNano-buffer controlled electron tunneling to regulate heterojunctional interface emission2096-457910.29026/oea.2021.200064https://doaj.org/article/af6f9311ffae4d8fbc7a9c86abf7933a2021-09-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2021.200064https://doaj.org/toc/2096-4579Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge. However, the dynamics for carrier tunneling to control the interface emission is still a mystery. Herein, the low-refractive HfO2 with a proper energy band configuration is employed as the buffer layer in achieving ZnO-microwire/HfO2/GaN heterojunctional light-emitting diodes (LEDs). The optically pumped lasing threshold and lifetime of the ZnO microwire are reduced with the introduced HfO2 layer. As a result, the interface emission is of blue-shift from visible wavelengths to 394 nm whereas the ultraviolet (UV) emission is enhanced. To regulate the interface recombination between electrons in the conduction band of ZnO and holes in the valence band of GaN, the tunneling electrons with higher conduction band are employed to produce a higher tunneling current through regulation of thin HfO2 film causing blue shift and interface emission enhancement. Our results provide a method to control the tunneling electrons in heterojunction for high-performance LEDs.Wei LiuZhuxin LiZengliang ShiRu WangYizhi ZhuChunxiang XuInstitue of Optics and Electronics, Chinese Academy of Sciencesarticletunneling electronlight-emitting diodeheterojunctional interfacenano hfo2 bufferOptics. LightQC350-467ENOpto-Electronic Advances, Vol 4, Iss 9, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	tunneling electron light-emitting diode heterojunctional interface nano hfo2 buffer Optics. Light QC350-467
spellingShingle	tunneling electron light-emitting diode heterojunctional interface nano hfo2 buffer Optics. Light QC350-467 Wei Liu Zhuxin Li Zengliang Shi Ru Wang Yizhi Zhu Chunxiang Xu Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
description	Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge. However, the dynamics for carrier tunneling to control the interface emission is still a mystery. Herein, the low-refractive HfO2 with a proper energy band configuration is employed as the buffer layer in achieving ZnO-microwire/HfO2/GaN heterojunctional light-emitting diodes (LEDs). The optically pumped lasing threshold and lifetime of the ZnO microwire are reduced with the introduced HfO2 layer. As a result, the interface emission is of blue-shift from visible wavelengths to 394 nm whereas the ultraviolet (UV) emission is enhanced. To regulate the interface recombination between electrons in the conduction band of ZnO and holes in the valence band of GaN, the tunneling electrons with higher conduction band are employed to produce a higher tunneling current through regulation of thin HfO2 film causing blue shift and interface emission enhancement. Our results provide a method to control the tunneling electrons in heterojunction for high-performance LEDs.
format	article
author	Wei Liu Zhuxin Li Zengliang Shi Ru Wang Yizhi Zhu Chunxiang Xu
author_facet	Wei Liu Zhuxin Li Zengliang Shi Ru Wang Yizhi Zhu Chunxiang Xu
author_sort	Wei Liu
title	Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
title_short	Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
title_full	Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
title_fullStr	Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
title_full_unstemmed	Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
title_sort	nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2021
url	https://doaj.org/article/af6f9311ffae4d8fbc7a9c86abf7933a
work_keys_str_mv	AT weiliu nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission AT zhuxinli nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission AT zengliangshi nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission AT ruwang nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission AT yizhizhu nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission AT chunxiangxu nanobuffercontrolledelectrontunnelingtoregulateheterojunctionalinterfaceemission
_version_	1718425882993885184

Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

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