>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An an...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Wiley
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/af7b9108e49547fe87abb76699ea52bb |
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| Sumario: | Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An anti‐reflection/high reflection coated laser with a stripe width of 100 μm exhibits a single‐facet output power over 25 W at a pumping current amplitude of 100 A. |
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