>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer

Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An an...

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Autores principales:	L. W. Hallman, B. S. Ryvkin, E. A. Avrutin, J. T. Kostamovaara
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/af7b9108e49547fe87abb76699ea52bb
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spelling	oai:doaj.org-article:af7b9108e49547fe87abb76699ea52bb2021-11-05T05:26:52Z>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer1350-911X0013-519410.1049/ell2.12298https://doaj.org/article/af7b9108e49547fe87abb76699ea52bb2021-11-01T00:00:00Zhttps://doi.org/10.1049/ell2.12298https://doaj.org/toc/0013-5194https://doaj.org/toc/1350-911XAbstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An anti‐reflection/high reflection coated laser with a stripe width of 100 μm exhibits a single‐facet output power over 25 W at a pumping current amplitude of 100 A.L. W. HallmanB. S. RyvkinE. A. AvrutinJ. T. KostamovaaraWileyarticleElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENElectronics Letters, Vol 57, Iss 23, Pp 891-893 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Electrical engineering. Electronics. Nuclear engineering TK1-9971 L. W. Hallman B. S. Ryvkin E. A. Avrutin J. T. Kostamovaara >25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
description	Abstract The experimental characterization of a high‐power pulsed semiconductor laser operating in the eye‐safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p‐cladding, is reported. An anti‐reflection/high reflection coated laser with a stripe width of 100 μm exhibits a single‐facet output power over 25 W at a pumping current amplitude of 100 A.
format	article
author	L. W. Hallman B. S. Ryvkin E. A. Avrutin J. T. Kostamovaara
author_facet	L. W. Hallman B. S. Ryvkin E. A. Avrutin J. T. Kostamovaara
author_sort	L. W. Hallman
title	>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
title_short	>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
title_full	>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
title_fullStr	>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
title_full_unstemmed	>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
title_sort	>25 w pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/af7b9108e49547fe87abb76699ea52bb
work_keys_str_mv	AT lwhallman 25wpulsesfrom15mmdoubleasymmetricwaveguide100mmstripelaserdiodewithbulkactivelayer AT bsryvkin 25wpulsesfrom15mmdoubleasymmetricwaveguide100mmstripelaserdiodewithbulkactivelayer AT eaavrutin 25wpulsesfrom15mmdoubleasymmetricwaveguide100mmstripelaserdiodewithbulkactivelayer AT jtkostamovaara 25wpulsesfrom15mmdoubleasymmetricwaveguide100mmstripelaserdiodewithbulkactivelayer
_version_	1718444490933403648

>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer

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