Kinetic control of tunable multi-state switching in ferroelectric thin films

The use of ferroeletric materials for multi-state device applications is still challenging. Here, the authors present a mechanism to stabilize non-volatile polarization states by populating volume fractions of two domain structures in PbZr0.2Ti0.8O3 via kinetic control of switching pathways.

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Detalles Bibliográficos
Autores principales:	R. Xu, S. Liu, S. Saremi, R. Gao, J. J. Wang, Z. Hong, H. Lu, A. Ghosh, S. Pandya, E. Bonturim, Z. H. Chen, L. Q. Chen, A. M. Rappe, L. W. Martin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/afe9766bd2dd4d6eb383b8d842d09d63
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spelling	oai:doaj.org-article:afe9766bd2dd4d6eb383b8d842d09d632021-12-02T14:38:40ZKinetic control of tunable multi-state switching in ferroelectric thin films10.1038/s41467-019-09207-92041-1723https://doaj.org/article/afe9766bd2dd4d6eb383b8d842d09d632019-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09207-9https://doaj.org/toc/2041-1723The use of ferroeletric materials for multi-state device applications is still challenging. Here, the authors present a mechanism to stabilize non-volatile polarization states by populating volume fractions of two domain structures in PbZr0.2Ti0.8O3 via kinetic control of switching pathways.R. XuS. LiuS. SaremiR. GaoJ. J. WangZ. HongH. LuA. GhoshS. PandyaE. BonturimZ. H. ChenL. Q. ChenA. M. RappeL. W. MartinNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q R. Xu S. Liu S. Saremi R. Gao J. J. Wang Z. Hong H. Lu A. Ghosh S. Pandya E. Bonturim Z. H. Chen L. Q. Chen A. M. Rappe L. W. Martin Kinetic control of tunable multi-state switching in ferroelectric thin films
description	The use of ferroeletric materials for multi-state device applications is still challenging. Here, the authors present a mechanism to stabilize non-volatile polarization states by populating volume fractions of two domain structures in PbZr0.2Ti0.8O3 via kinetic control of switching pathways.
format	article
author	R. Xu S. Liu S. Saremi R. Gao J. J. Wang Z. Hong H. Lu A. Ghosh S. Pandya E. Bonturim Z. H. Chen L. Q. Chen A. M. Rappe L. W. Martin
author_facet	R. Xu S. Liu S. Saremi R. Gao J. J. Wang Z. Hong H. Lu A. Ghosh S. Pandya E. Bonturim Z. H. Chen L. Q. Chen A. M. Rappe L. W. Martin
author_sort	R. Xu
title	Kinetic control of tunable multi-state switching in ferroelectric thin films
title_short	Kinetic control of tunable multi-state switching in ferroelectric thin films
title_full	Kinetic control of tunable multi-state switching in ferroelectric thin films
title_fullStr	Kinetic control of tunable multi-state switching in ferroelectric thin films
title_full_unstemmed	Kinetic control of tunable multi-state switching in ferroelectric thin films
title_sort	kinetic control of tunable multi-state switching in ferroelectric thin films
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/afe9766bd2dd4d6eb383b8d842d09d63
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Kinetic control of tunable multi-state switching in ferroelectric thin films

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