Kinetic control of tunable multi-state switching in ferroelectric thin films
The use of ferroeletric materials for multi-state device applications is still challenging. Here, the authors present a mechanism to stabilize non-volatile polarization states by populating volume fractions of two domain structures in PbZr0.2Ti0.8O3 via kinetic control of switching pathways.
Guardado en:
Autores principales: | R. Xu, S. Liu, S. Saremi, R. Gao, J. J. Wang, Z. Hong, H. Lu, A. Ghosh, S. Pandya, E. Bonturim, Z. H. Chen, L. Q. Chen, A. M. Rappe, L. W. Martin |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
|
Materias: | |
Acceso en línea: | https://doaj.org/article/afe9766bd2dd4d6eb383b8d842d09d63 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Domain topology and domain switching kinetics in a hybrid improper ferroelectric
por: F. -T. Huang, et al.
Publicado: (2016) -
Room temperature ferroelectricity in fluoroperovskite thin films
por: Ming Yang, et al.
Publicado: (2017) -
Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
por: Kyoungjun Lee, et al.
Publicado: (2021) -
Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field
por: Minh D. Nguyen, et al.
Publicado: (2021) -
Microwave a.c. conductivity of domain walls in ferroelectric thin films
por: Alexander Tselev, et al.
Publicado: (2016)