Metallization and Electrical Transport Behaviors of GaSb under High-Pressure

Abstract The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The te...

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Autores principales:	Guozhao Zhang, Baojia Wu, Jia Wang, Haiwa Zhang, Hao Liu, Junkai Zhang, Cailong Liu, Guangrui Gu, Lianhua Tian, Yanzhang Ma, Chunxiao Gao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b043c955e06c45e9854e8360b2624bbd
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spelling	oai:doaj.org-article:b043c955e06c45e9854e8360b2624bbd2021-12-02T15:05:11ZMetallization and Electrical Transport Behaviors of GaSb under High-Pressure10.1038/s41598-017-02592-52045-2322https://doaj.org/article/b043c955e06c45e9854e8360b2624bbd2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02592-5https://doaj.org/toc/2045-2322Abstract The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma. In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.Guozhao ZhangBaojia WuJia WangHaiwa ZhangHao LiuJunkai ZhangCailong LiuGuangrui GuLianhua TianYanzhang MaChunxiao GaoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Guozhao Zhang Baojia Wu Jia Wang Haiwa Zhang Hao Liu Junkai Zhang Cailong Liu Guangrui Gu Lianhua Tian Yanzhang Ma Chunxiao Gao Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
description	Abstract The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma. In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.
format	article
author	Guozhao Zhang Baojia Wu Jia Wang Haiwa Zhang Hao Liu Junkai Zhang Cailong Liu Guangrui Gu Lianhua Tian Yanzhang Ma Chunxiao Gao
author_facet	Guozhao Zhang Baojia Wu Jia Wang Haiwa Zhang Hao Liu Junkai Zhang Cailong Liu Guangrui Gu Lianhua Tian Yanzhang Ma Chunxiao Gao
author_sort	Guozhao Zhang
title	Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
title_short	Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
title_full	Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
title_fullStr	Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
title_full_unstemmed	Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
title_sort	metallization and electrical transport behaviors of gasb under high-pressure
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/b043c955e06c45e9854e8360b2624bbd
work_keys_str_mv	AT guozhaozhang metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT baojiawu metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT jiawang metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT haiwazhang metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT haoliu metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT junkaizhang metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT cailongliu metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT guangruigu metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT lianhuatian metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT yanzhangma metallizationandelectricaltransportbehaviorsofgasbunderhighpressure AT chunxiaogao metallizationandelectricaltransportbehaviorsofgasbunderhighpressure
_version_	1718388915078955008

Metallization and Electrical Transport Behaviors of GaSb under High-Pressure

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