Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis

Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesiz...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Vladimir N. Jarkin, Oleg A. Kisarin, Tatyana V. Kritskaya
Formato: article
Lenguaje:EN
Publicado: Pensoft Publishers 2021
Materias:
Acceso en línea:https://doaj.org/article/b06798a64b184177b2bf316d7486b84f
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:b06798a64b184177b2bf316d7486b84f
record_format dspace
spelling oai:doaj.org-article:b06798a64b184177b2bf316d7486b84f2021-11-09T04:30:07ZMethods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis10.3897/j.moem.7.1.649532452-1779https://doaj.org/article/b06798a64b184177b2bf316d7486b84f2021-03-01T00:00:00Zhttps://moem.pensoft.net/article/64953/download/pdf/https://moem.pensoft.net/article/64953/download/xml/https://moem.pensoft.net/article/64953/https://doaj.org/toc/2452-1779Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost.Vladimir N. JarkinOleg A. KisarinTatyana V. KritskayaPensoft PublishersarticleElectronicsTK7800-8360ENModern Electronic Materials, Vol 7, Iss 1, Pp 1-10 (2021)
institution DOAJ
collection DOAJ
language EN
topic Electronics
TK7800-8360
spellingShingle Electronics
TK7800-8360
Vladimir N. Jarkin
Oleg A. Kisarin
Tatyana V. Kritskaya
Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
description Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost.
format article
author Vladimir N. Jarkin
Oleg A. Kisarin
Tatyana V. Kritskaya
author_facet Vladimir N. Jarkin
Oleg A. Kisarin
Tatyana V. Kritskaya
author_sort Vladimir N. Jarkin
title Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
title_short Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
title_full Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
title_fullStr Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
title_full_unstemmed Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
title_sort methods of trichlorosilane synthesis for polycrystalline silicon production. part 1: direct synthesis
publisher Pensoft Publishers
publishDate 2021
url https://doaj.org/article/b06798a64b184177b2bf316d7486b84f
work_keys_str_mv AT vladimirnjarkin methodsoftrichlorosilanesynthesisforpolycrystallinesiliconproductionpart1directsynthesis
AT olegakisarin methodsoftrichlorosilanesynthesisforpolycrystallinesiliconproductionpart1directsynthesis
AT tatyanavkritskaya methodsoftrichlorosilanesynthesisforpolycrystallinesiliconproductionpart1directsynthesis
_version_ 1718441325125173248