Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

Abstract The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the...

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Autores principales:	Robbyn Trappen, A. C. Garcia-Castro, Vu Thanh Tra, Chih-Yeh Huang, Wilfredo Ibarra-Hernandez, James Fitch, Sobhit Singh, Jinling Zhou, Guerau Cabrera, Ying-Hao Chu, James M. LeBeau, Aldo H. Romero, Mikel B. Holcomb
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Surface Valence Expected Bulk Value LSMO Layers Thin Film LSMO Polar Catastrophe Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b0a61479edce4b2ba50dc13e9c1619fe
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spelling	oai:doaj.org-article:b0a61479edce4b2ba50dc13e9c1619fe2021-12-02T15:05:17ZElectrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films10.1038/s41598-018-32701-x2045-2322https://doaj.org/article/b0a61479edce4b2ba50dc13e9c1619fe2018-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-32701-xhttps://doaj.org/toc/2045-2322Abstract The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.Robbyn TrappenA. C. Garcia-CastroVu Thanh TraChih-Yeh HuangWilfredo Ibarra-HernandezJames FitchSobhit SinghJinling ZhouGuerau CabreraYing-Hao ChuJames M. LeBeauAldo H. RomeroMikel B. HolcombNature PortfolioarticleSurface ValenceExpected Bulk ValueLSMO LayersThin Film LSMOPolar CatastropheMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Surface Valence Expected Bulk Value LSMO Layers Thin Film LSMO Polar Catastrophe Medicine R Science Q
spellingShingle	Surface Valence Expected Bulk Value LSMO Layers Thin Film LSMO Polar Catastrophe Medicine R Science Q Robbyn Trappen A. C. Garcia-Castro Vu Thanh Tra Chih-Yeh Huang Wilfredo Ibarra-Hernandez James Fitch Sobhit Singh Jinling Zhou Guerau Cabrera Ying-Hao Chu James M. LeBeau Aldo H. Romero Mikel B. Holcomb Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
description	Abstract The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.
format	article
author	Robbyn Trappen A. C. Garcia-Castro Vu Thanh Tra Chih-Yeh Huang Wilfredo Ibarra-Hernandez James Fitch Sobhit Singh Jinling Zhou Guerau Cabrera Ying-Hao Chu James M. LeBeau Aldo H. Romero Mikel B. Holcomb
author_facet	Robbyn Trappen A. C. Garcia-Castro Vu Thanh Tra Chih-Yeh Huang Wilfredo Ibarra-Hernandez James Fitch Sobhit Singh Jinling Zhou Guerau Cabrera Ying-Hao Chu James M. LeBeau Aldo H. Romero Mikel B. Holcomb
author_sort	Robbyn Trappen
title	Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
title_short	Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
title_full	Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
title_fullStr	Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
title_full_unstemmed	Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films
title_sort	electrostatic potential and valence modulation in la0.7sr0.3mno3 thin films
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b0a61479edce4b2ba50dc13e9c1619fe
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Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

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