Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics

Abstract Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices requir...

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Autores principales:	Hyun-June Jang, Ki Joong Lee, Kwang-Won Jo, Howard E. Katz, Won-Ju Cho, Yong-Beom Shin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b1cd7857ff1742f887ee07c6eb943741
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spelling	oai:doaj.org-article:b1cd7857ff1742f887ee07c6eb9437412021-12-02T11:52:40ZTop-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics10.1038/s41598-017-06040-22045-2322https://doaj.org/article/b1cd7857ff1742f887ee07c6eb9437412017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06040-2https://doaj.org/toc/2045-2322Abstract Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either “bottom-up” growth techniques or by “top-down” e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm2/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.Hyun-June JangKi Joong LeeKwang-Won JoHoward E. KatzWon-Ju ChoYong-Beom ShinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyun-June Jang Ki Joong Lee Kwang-Won Jo Howard E. Katz Won-Ju Cho Yong-Beom Shin Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
description	Abstract Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either “bottom-up” growth techniques or by “top-down” e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm2/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.
format	article
author	Hyun-June Jang Ki Joong Lee Kwang-Won Jo Howard E. Katz Won-Ju Cho Yong-Beom Shin
author_facet	Hyun-June Jang Ki Joong Lee Kwang-Won Jo Howard E. Katz Won-Ju Cho Yong-Beom Shin
author_sort	Hyun-June Jang
title	Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
title_short	Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
title_full	Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
title_fullStr	Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
title_full_unstemmed	Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
title_sort	top-down fabrication and enhanced active area electronic characteristics of amorphous oxide nanoribbons for flexible electronics
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/b1cd7857ff1742f887ee07c6eb943741
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Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics

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