Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Chi-Han Wu, Po-Jen Shih, Yao-Chuan Tsai, Ching-Liang Dai
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	micro magnetic sensor three-axis sensing high sensitivity CMOS MEMS Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/b1edba1b0a1e439a8a7ab9f27f5e7393
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:b1edba1b0a1e439a8a7ab9f27f5e7393
record_format	dspace
spelling	oai:doaj.org-article:b1edba1b0a1e439a8a7ab9f27f5e73932021-11-11T19:00:00ZManufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology10.3390/s212169531424-8220https://doaj.org/article/b1edba1b0a1e439a8a7ab9f27f5e73932021-10-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/21/6953https://doaj.org/toc/1424-8220A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.Chi-Han WuPo-Jen ShihYao-Chuan TsaiChing-Liang DaiMDPI AGarticlemicro magnetic sensorthree-axis sensinghigh sensitivityCMOSMEMSChemical technologyTP1-1185ENSensors, Vol 21, Iss 6953, p 6953 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	micro magnetic sensor three-axis sensing high sensitivity CMOS MEMS Chemical technology TP1-1185
spellingShingle	micro magnetic sensor three-axis sensing high sensitivity CMOS MEMS Chemical technology TP1-1185 Chi-Han Wu Po-Jen Shih Yao-Chuan Tsai Ching-Liang Dai Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
description	A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.
format	article
author	Chi-Han Wu Po-Jen Shih Yao-Chuan Tsai Ching-Liang Dai
author_facet	Chi-Han Wu Po-Jen Shih Yao-Chuan Tsai Ching-Liang Dai
author_sort	Chi-Han Wu
title	Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_short	Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_full	Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_fullStr	Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_full_unstemmed	Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
title_sort	manufacturing and characterization of three-axis magnetic sensors using the standard 180 nm cmos technology
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/b1edba1b0a1e439a8a7ab9f27f5e7393
work_keys_str_mv	AT chihanwu manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology AT pojenshih manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology AT yaochuantsai manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology AT chingliangdai manufacturingandcharacterizationofthreeaxismagneticsensorsusingthestandard180nmcmostechnology
_version_	1718431666810126336

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Ejemplares similares