Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon...
Guardado en:
| Autores principales: | , , , , , , , , , , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/b1f94823652341c4b8d740f96d55b1f3 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| id |
oai:doaj.org-article:b1f94823652341c4b8d740f96d55b1f3 |
|---|---|
| record_format |
dspace |
| spelling |
oai:doaj.org-article:b1f94823652341c4b8d740f96d55b1f32021-12-02T17:40:27ZEstablishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials10.1038/s41467-020-16913-22041-1723https://doaj.org/article/b1f94823652341c4b8d740f96d55b1f32020-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16913-2https://doaj.org/toc/2041-1723Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.Qingyong RenChenguang FuQinyi QiuShengnan DaiZheyuan LiuTakatsugu MasudaShinichiro AsaiMasato HagihalaSanghyun LeeShuki TorriTakashi KamiyamaLunhua HeXin TongClaudia FelserDavid J. SinghTiejun ZhuJiong YangJie MaNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Science Q |
| spellingShingle |
Science Q Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| description |
Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering. |
| format |
article |
| author |
Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma |
| author_facet |
Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma |
| author_sort |
Qingyong Ren |
| title |
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| title_short |
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| title_full |
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| title_fullStr |
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| title_full_unstemmed |
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials |
| title_sort |
establishing the carrier scattering phase diagram for zrnisn-based half-heusler thermoelectric materials |
| publisher |
Nature Portfolio |
| publishDate |
2020 |
| url |
https://doaj.org/article/b1f94823652341c4b8d740f96d55b1f3 |
| work_keys_str_mv |
AT qingyongren establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT chenguangfu establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT qinyiqiu establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT shengnandai establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT zheyuanliu establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT takatsugumasuda establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT shinichiroasai establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT masatohagihala establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT sanghyunlee establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT shukitorri establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT takashikamiyama establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT lunhuahe establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT xintong establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT claudiafelser establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT davidjsingh establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT tiejunzhu establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT jiongyang establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials AT jiema establishingthecarrierscatteringphasediagramforzrnisnbasedhalfheuslerthermoelectricmaterials |
| _version_ |
1718379783572684800 |