Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Twisting vertically stacked individual layers of two-dimensional materials can trigger exciting fundamental physics and advanced electronic device applications. Here, the authors report five times enhancement in vertical heterojunction conductivity on rotating MoS2 over graphene.

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Detalles Bibliográficos
Autores principales: Mengzhou Liao, Ze-Wen Wu, Luojun Du, Tingting Zhang, Zheng Wei, Jianqi Zhu, Hua Yu, Jian Tang, Lin Gu, Yanxia Xing, Rong Yang, Dongxia Shi, Yugui Yao, Guangyu Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
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Acceso en línea:https://doaj.org/article/b23404a139584ec9a4a68b1d8fe3b16c
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