Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results de...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:b23446ec68ee4627bd08cd91c934ad9d
record_format	dspace
spelling	oai:doaj.org-article:b23446ec68ee4627bd08cd91c934ad9d2021-12-01T18:52:06ZNano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors2158-322610.1063/5.0066311https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0066311https://doaj.org/toc/2158-3226In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results demonstrate that by regulating the Ag doping concentration in the switching layer (SL), an electroforming-free switching with an Ion/Ioff ratio of ∼108 could be achieved, having an extremely low Ioff value of ∼10−13 A. Furthermore, cycling endurance can also be improved as the formation of a laterally thick and stable filament does not happen promptly with consequent measurements when there is a limited amount of Ag in the SL. The selector device performance enhancement is attributed to the doping-based polycrystalline structure that facilitates enhanced control on filament formation due to the restricted availability and anisotropic diffusion of Ag ions in the polycrystalline ZnO SL, thereby trimming down the overall stochasticity during metallic filament growth. The present study demonstrates that a doping-based polycrystalline SL structure can be implemented in a selector device to augment TS characteristics, i.e., device variances and cycling endurance for adoption in ultra-high density memory applications.Akshay SahotaHarrison Sejoon KimJaidah MohanDan N. LeYong Chan JungSi Joon KimJang-Sik LeeJinho AhnHeber Hernandez-ArriagaJiyoung KimAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115213-115213-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
description	In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results demonstrate that by regulating the Ag doping concentration in the switching layer (SL), an electroforming-free switching with an Ion/Ioff ratio of ∼108 could be achieved, having an extremely low Ioff value of ∼10−13 A. Furthermore, cycling endurance can also be improved as the formation of a laterally thick and stable filament does not happen promptly with consequent measurements when there is a limited amount of Ag in the SL. The selector device performance enhancement is attributed to the doping-based polycrystalline structure that facilitates enhanced control on filament formation due to the restricted availability and anisotropic diffusion of Ag ions in the polycrystalline ZnO SL, thereby trimming down the overall stochasticity during metallic filament growth. The present study demonstrates that a doping-based polycrystalline SL structure can be implemented in a selector device to augment TS characteristics, i.e., device variances and cycling endurance for adoption in ultra-high density memory applications.
format	article
author	Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim
author_facet	Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim
author_sort	Akshay Sahota
title	Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
title_short	Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
title_full	Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
title_fullStr	Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
title_full_unstemmed	Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
title_sort	nano-polycrystalline ag-doped zno layer for steep-slope threshold switching selectors
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d
work_keys_str_mv	AT akshaysahota nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT harrisonsejoonkim nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT jaidahmohan nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT dannle nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT yongchanjung nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT sijoonkim nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT jangsiklee nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT jinhoahn nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT heberhernandezarriaga nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors AT jiyoungkim nanopolycrystallineagdopedznolayerforsteepslopethresholdswitchingselectors
_version_	1718404714971791360

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Ejemplares similares