Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the...

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Autores principales:	Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Iaroslav V. Levitskii, Gleb V. Voznyuk, Evgeniy E. Tatarinov, Vadim P. Evtikhiev, Sergey N. Rodin, Vasily N. Kaliteevskiy, Leonid S. Chechurin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b2748e62604b4357b63fc69663388f22
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spelling	oai:doaj.org-article:b2748e62604b4357b63fc69663388f222021-12-02T12:33:00ZApproach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy10.1038/s41598-018-25647-72045-2322https://doaj.org/article/b2748e62604b4357b63fc69663388f222018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25647-7https://doaj.org/toc/2045-2322Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.Galia PozinaAzat R. GubaydullinMaxim I. MitrofanovMikhail A. KaliteevskiIaroslav V. LevitskiiGleb V. VoznyukEvgeniy E. TatarinovVadim P. EvtikhievSergey N. RodinVasily N. KaliteevskiyLeonid S. ChechurinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Galia Pozina Azat R. Gubaydullin Maxim I. Mitrofanov Mikhail A. Kaliteevski Iaroslav V. Levitskii Gleb V. Voznyuk Evgeniy E. Tatarinov Vadim P. Evtikhiev Sergey N. Rodin Vasily N. Kaliteevskiy Leonid S. Chechurin Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
description	Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.
format	article
author	Galia Pozina Azat R. Gubaydullin Maxim I. Mitrofanov Mikhail A. Kaliteevski Iaroslav V. Levitskii Gleb V. Voznyuk Evgeniy E. Tatarinov Vadim P. Evtikhiev Sergey N. Rodin Vasily N. Kaliteevskiy Leonid S. Chechurin
author_facet	Galia Pozina Azat R. Gubaydullin Maxim I. Mitrofanov Mikhail A. Kaliteevski Iaroslav V. Levitskii Gleb V. Voznyuk Evgeniy E. Tatarinov Vadim P. Evtikhiev Sergey N. Rodin Vasily N. Kaliteevskiy Leonid S. Chechurin
author_sort	Galia Pozina
title	Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
title_short	Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
title_full	Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
title_fullStr	Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
title_full_unstemmed	Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
title_sort	approach to high quality gan lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b2748e62604b4357b63fc69663388f22
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Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

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