2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Abstract The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial product...

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Autores principales:	Melanie Timpel, Giovanni Ligorio, Amir Ghiami, Luca Gavioli, Emanuele Cavaliere, Andrea Chiappini, Francesca Rossi, Luca Pasquali, Fabian Gärisch, Emil J. W. List-Kratochvil, Petr Nozar, Alberto Quaranta, Roberto Verucchi, Marco V. Nardi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/b2c93d7963b447eea1cfd6a19f5bffa4
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spelling	oai:doaj.org-article:b2c93d7963b447eea1cfd6a19f5bffa42021-12-02T15:23:20Z2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film10.1038/s41699-021-00244-x2397-7132https://doaj.org/article/b2c93d7963b447eea1cfd6a19f5bffa42021-07-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00244-xhttps://doaj.org/toc/2397-7132Abstract The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial production of MoS2-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large-area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS2, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.Melanie TimpelGiovanni LigorioAmir GhiamiLuca GavioliEmanuele CavaliereAndrea ChiappiniFrancesca RossiLuca PasqualiFabian GärischEmil J. W. List-KratochvilPetr NozarAlberto QuarantaRoberto VerucchiMarco V. NardiNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Melanie Timpel Giovanni Ligorio Amir Ghiami Luca Gavioli Emanuele Cavaliere Andrea Chiappini Francesca Rossi Luca Pasquali Fabian Gärisch Emil J. W. List-Kratochvil Petr Nozar Alberto Quaranta Roberto Verucchi Marco V. Nardi 2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
description	Abstract The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial production of MoS2-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large-area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS2, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.
format	article
author	Melanie Timpel Giovanni Ligorio Amir Ghiami Luca Gavioli Emanuele Cavaliere Andrea Chiappini Francesca Rossi Luca Pasquali Fabian Gärisch Emil J. W. List-Kratochvil Petr Nozar Alberto Quaranta Roberto Verucchi Marco V. Nardi
author_facet	Melanie Timpel Giovanni Ligorio Amir Ghiami Luca Gavioli Emanuele Cavaliere Andrea Chiappini Francesca Rossi Luca Pasquali Fabian Gärisch Emil J. W. List-Kratochvil Petr Nozar Alberto Quaranta Roberto Verucchi Marco V. Nardi
author_sort	Melanie Timpel
title	2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
title_short	2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
title_full	2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
title_fullStr	2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
title_full_unstemmed	2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
title_sort	2d-mos2 goes 3d: transferring optoelectronic properties of 2d mos2 to a large-area thin film
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b2c93d7963b447eea1cfd6a19f5bffa4
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2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

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