2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Abstract The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial product...

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Auteurs principaux: Melanie Timpel, Giovanni Ligorio, Amir Ghiami, Luca Gavioli, Emanuele Cavaliere, Andrea Chiappini, Francesca Rossi, Luca Pasquali, Fabian Gärisch, Emil J. W. List-Kratochvil, Petr Nozar, Alberto Quaranta, Roberto Verucchi, Marco V. Nardi
Format: article
Langue:EN
Publié: Nature Portfolio 2021
Sujets:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Accès en ligne:https://doaj.org/article/b2c93d7963b447eea1cfd6a19f5bffa4
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https://doaj.org/article/b2c93d7963b447eea1cfd6a19f5bffa4

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