Nanowire-based electronic and optoelectronic devices

A brief review of nanowires used in electronic and optoelectronic devices that could enable diverse applications is given. Nanowire field-effect transistors, nanowire lasers, as well as crossed nanowire structures and nanowire heterostructures, are discussed. Due to the possibility of controlling th...

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Autor principal:	Dubcoveţchi, Iurie
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2015
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/b3412f3908b64b2896da00fdbdd5dad7
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spelling	oai:doaj.org-article:b3412f3908b64b2896da00fdbdd5dad72021-11-21T11:58:32ZNanowire-based electronic and optoelectronic devices[535.215+535.248]:621.382537-63651810-648Xhttps://doaj.org/article/b3412f3908b64b2896da00fdbdd5dad72015-11-01T00:00:00Zhttps://mjps.nanotech.md/archive/2015/article/43391https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A brief review of nanowires used in electronic and optoelectronic devices that could enable diverse applications is given. Nanowire field-effect transistors, nanowire lasers, as well as crossed nanowire structures and nanowire heterostructures, are discussed. Due to the possibility of controlling the key parameters (chemical composition, structure, size, doping, etc.) on a nanoscale, these devices exhibit new or enhanced functions crucial to many areas of technology. Dubcoveţchi, IurieD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 14, Iss 1-2, Pp 69-72 (2015)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Dubcoveţchi, Iurie Nanowire-based electronic and optoelectronic devices
description	A brief review of nanowires used in electronic and optoelectronic devices that could enable diverse applications is given. Nanowire field-effect transistors, nanowire lasers, as well as crossed nanowire structures and nanowire heterostructures, are discussed. Due to the possibility of controlling the key parameters (chemical composition, structure, size, doping, etc.) on a nanoscale, these devices exhibit new or enhanced functions crucial to many areas of technology.
format	article
author	Dubcoveţchi, Iurie
author_facet	Dubcoveţchi, Iurie
author_sort	Dubcoveţchi, Iurie
title	Nanowire-based electronic and optoelectronic devices
title_short	Nanowire-based electronic and optoelectronic devices
title_full	Nanowire-based electronic and optoelectronic devices
title_fullStr	Nanowire-based electronic and optoelectronic devices
title_full_unstemmed	Nanowire-based electronic and optoelectronic devices
title_sort	nanowire-based electronic and optoelectronic devices
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2015
url	https://doaj.org/article/b3412f3908b64b2896da00fdbdd5dad7
work_keys_str_mv	AT dubcovetchiiurie nanowirebasedelectronicandoptoelectronicdevices
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Nanowire-based electronic and optoelectronic devices

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