Photoluminescence of ZnSe nanocrystals obtained by spin-coating method

Synthesis of the nanoparticles has made great strides in the field of nanotechnologies particularly in optoelectronics. Reading information by lasers on solid supports, as example, is performed by wide gap semiconductor thin films. From fundamental research, several theories were proposed to explain...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Aksas, A., Chelouche, A., Boudine, B., Halimi, O., Djouadi, D.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/b354028688554763b487e1cd72c59221
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:b354028688554763b487e1cd72c59221
record_format	dspace
spelling	oai:doaj.org-article:b354028688554763b487e1cd72c592212021-11-21T12:09:04ZPhotoluminescence of ZnSe nanocrystals obtained by spin-coating method2537-63651810-648Xhttps://doaj.org/article/b354028688554763b487e1cd72c592212006-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3566https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Synthesis of the nanoparticles has made great strides in the field of nanotechnologies particularly in optoelectronics. Reading information by lasers on solid supports, as example, is performed by wide gap semiconductor thin films. From fundamental research, several theories were proposed to explain the physical properties of this new class of materials. ZnSe nanoparticles incorporated in polystyrene films were deposited by spin-coating method on glass substrates. X-rays diffraction measurement confirms the incorporation of ZnSe with a cubic structure and nanometer size, in the polystyrene matrix. Optical characterization by UV - visible spectroscopy shows a shift of the edge of absorption toward great energies compared to the bulk crystal and the presence of broad peak witch is due to the creation of excitons in ZnSe nanocrystals. This displacement of the edge is due to quantum confinement induced by the low size of ZnSe crystallites. The width of the peaks enables us to estimate the distribution of crystallite size. Photoluminescence spectrum of films is formed by four (04) bands. The band in 432 nm (2.867 eV) is attributed to the transition band to band. The second in 471 nm (2.633 eV) is due to the transition between defect levels in the gap. The last, at 624 nm (2.366 eV), is assigned to the transition between levels in the gap created by the vacant Zn sites while the shoulder located at 408 nm (3.040 eV) is probably due to the polystyrene. Aksas, A.Chelouche, A.Boudine, B.Halimi, O.Djouadi, D.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 3-4, Pp 327-331 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Aksas, A. Chelouche, A. Boudine, B. Halimi, O. Djouadi, D. Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
description	Synthesis of the nanoparticles has made great strides in the field of nanotechnologies particularly in optoelectronics. Reading information by lasers on solid supports, as example, is performed by wide gap semiconductor thin films. From fundamental research, several theories were proposed to explain the physical properties of this new class of materials. ZnSe nanoparticles incorporated in polystyrene films were deposited by spin-coating method on glass substrates. X-rays diffraction measurement confirms the incorporation of ZnSe with a cubic structure and nanometer size, in the polystyrene matrix. Optical characterization by UV - visible spectroscopy shows a shift of the edge of absorption toward great energies compared to the bulk crystal and the presence of broad peak witch is due to the creation of excitons in ZnSe nanocrystals. This displacement of the edge is due to quantum confinement induced by the low size of ZnSe crystallites. The width of the peaks enables us to estimate the distribution of crystallite size. Photoluminescence spectrum of films is formed by four (04) bands. The band in 432 nm (2.867 eV) is attributed to the transition band to band. The second in 471 nm (2.633 eV) is due to the transition between defect levels in the gap. The last, at 624 nm (2.366 eV), is assigned to the transition between levels in the gap created by the vacant Zn sites while the shoulder located at 408 nm (3.040 eV) is probably due to the polystyrene.
format	article
author	Aksas, A. Chelouche, A. Boudine, B. Halimi, O. Djouadi, D.
author_facet	Aksas, A. Chelouche, A. Boudine, B. Halimi, O. Djouadi, D.
author_sort	Aksas, A.
title	Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
title_short	Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
title_full	Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
title_fullStr	Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
title_full_unstemmed	Photoluminescence of ZnSe nanocrystals obtained by spin-coating method
title_sort	photoluminescence of znse nanocrystals obtained by spin-coating method
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/b354028688554763b487e1cd72c59221
work_keys_str_mv	AT aksasa photoluminescenceofznsenanocrystalsobtainedbyspincoatingmethod AT chelouchea photoluminescenceofznsenanocrystalsobtainedbyspincoatingmethod AT boudineb photoluminescenceofznsenanocrystalsobtainedbyspincoatingmethod AT halimio photoluminescenceofznsenanocrystalsobtainedbyspincoatingmethod AT djouadid photoluminescenceofznsenanocrystalsobtainedbyspincoatingmethod
_version_	1718419207028211712

Photoluminescence of ZnSe nanocrystals obtained by spin-coating method

Ejemplares similares