Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Abstract The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C wher...

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Autores principales:	P. Priyadarshini, Subhashree Das, D. Alagarasan, R. Ganesan, S. Varadharajaperumal, Ramakanta Naik
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b38b3d203f954035be110e9fd3f65fd1
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spelling	oai:doaj.org-article:b38b3d203f954035be110e9fd3f65fd12021-11-08T10:51:39ZObservation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing10.1038/s41598-021-01134-42045-2322https://doaj.org/article/b38b3d203f954035be110e9fd3f65fd12021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01134-4https://doaj.org/toc/2045-2322Abstract The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.P. PriyadarshiniSubhashree DasD. AlagarasanR. GanesanS. VaradharajaperumalRamakanta NaikNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q P. Priyadarshini Subhashree Das D. Alagarasan R. Ganesan S. Varadharajaperumal Ramakanta Naik Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
description	Abstract The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.
format	article
author	P. Priyadarshini Subhashree Das D. Alagarasan R. Ganesan S. Varadharajaperumal Ramakanta Naik
author_facet	P. Priyadarshini Subhashree Das D. Alagarasan R. Ganesan S. Varadharajaperumal Ramakanta Naik
author_sort	P. Priyadarshini
title	Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
title_short	Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
title_full	Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
title_fullStr	Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
title_full_unstemmed	Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
title_sort	observation of high nonlinearity in bi doped bixin35-xse65 thin films with annealing
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b38b3d203f954035be110e9fd3f65fd1
work_keys_str_mv	AT ppriyadarshini observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing AT subhashreedas observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing AT dalagarasan observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing AT rganesan observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing AT svaradharajaperumal observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing AT ramakantanaik observationofhighnonlinearityinbidopedbixin35xse65thinfilmswithannealing
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Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

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