Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield n...

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Autores principales:	J. Vukajlovic-Plestina, W. Kim, L. Ghisalberti, G. Varnavides, G. Tütüncuoglu, H. Potts, M. Friedl, L. Güniat, W. C. Carter, V. G. Dubrovskii, A. Fontcuberta i Morral
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b3b57ddb5170437f885fca2094727d4a
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spelling	oai:doaj.org-article:b3b57ddb5170437f885fca2094727d4a2021-12-02T14:39:37ZFundamental aspects to localize self-catalyzed III-V nanowires on silicon10.1038/s41467-019-08807-92041-1723https://doaj.org/article/b3b57ddb5170437f885fca2094727d4a2019-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-08807-9https://doaj.org/toc/2041-1723The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield nanowire arrays.J. Vukajlovic-PlestinaW. KimL. GhisalbertiG. VarnavidesG. TütüncuogluH. PottsM. FriedlL. GüniatW. C. CarterV. G. DubrovskiiA. Fontcuberta i MorralNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q J. Vukajlovic-Plestina W. Kim L. Ghisalberti G. Varnavides G. Tütüncuoglu H. Potts M. Friedl L. Güniat W. C. Carter V. G. Dubrovskii A. Fontcuberta i Morral Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
description	The ability to place perfectly aligned vertical nanowires at chosen positions on a silicon substrate is an important challenge in device fabrication. Here, the authors propose a mechanism to explain self-catalyzed III-V nanowire growth on silicon, providing valuable insights for growing high yield nanowire arrays.
format	article
author	J. Vukajlovic-Plestina W. Kim L. Ghisalberti G. Varnavides G. Tütüncuoglu H. Potts M. Friedl L. Güniat W. C. Carter V. G. Dubrovskii A. Fontcuberta i Morral
author_facet	J. Vukajlovic-Plestina W. Kim L. Ghisalberti G. Varnavides G. Tütüncuoglu H. Potts M. Friedl L. Güniat W. C. Carter V. G. Dubrovskii A. Fontcuberta i Morral
author_sort	J. Vukajlovic-Plestina
title	Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_short	Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_full	Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_fullStr	Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_full_unstemmed	Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
title_sort	fundamental aspects to localize self-catalyzed iii-v nanowires on silicon
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/b3b57ddb5170437f885fca2094727d4a
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Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

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