Super-diffusion of excited carriers in semiconductors

Determining the spatial dynamics of excited carriers will provide a more complete understanding of ultrafast carrier dynamics in materials. Using scanning ultrafast electron microscopy, Najafiet al. are able to observe the spatiotemporal dynamics of excited electron and hole carriers in silicon.

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Detalles Bibliográficos
Autores principales: Ebrahim Najafi, Vsevolod Ivanov, Ahmed Zewail, Marco Bernardi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/b3fd7108689e450ca31dda0f4b8880e6
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