Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells

Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a...

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Autores principales:	Sîrbu, Nicolae, Dorogan, Andrei, Dorogan, Valerian, Vieru, Tatiana, Ursachi, Veaceslav, Zalamai, Victor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/b43bfd6c2c7b4773a9a6d795c3723080
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spelling	oai:doaj.org-article:b43bfd6c2c7b4773a9a6d795c37230802021-11-21T12:00:50ZInterband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells2537-63651810-648Xhttps://doaj.org/article/b43bfd6c2c7b4773a9a6d795c37230802012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22423https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a Brewster angle (76о). Narrow lines at 0.9021; 1.0161; 1.1302; 1.1973; and 1.2766 eV were observed in the reflectance and absorption spectra, which are due to hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), and hh3,lh3,-e3(1s) transitions, as well as features due to quantum dotes (QDs) formed at the interface of nanolayers and the buffer. The contours of reflectance and absorption spectra are calculated with a single-oscillator, and many-oscillator models. The oscillator strength and the damping parameter are estimated for the optical transitions in QWs and QDs. The radiative life time of the exciton in a QW and a QD was found to be τо = (2Г0)-1 = 2x10-12 s.Sîrbu, NicolaeDorogan, AndreiDorogan, ValerianVieru, TatianaUrsachi, VeaceslavZalamai, VictorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 319-332 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Sîrbu, Nicolae Dorogan, Andrei Dorogan, Valerian Vieru, Tatiana Ursachi, Veaceslav Zalamai, Victor Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
description	Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a Brewster angle (76о). Narrow lines at 0.9021; 1.0161; 1.1302; 1.1973; and 1.2766 eV were observed in the reflectance and absorption spectra, which are due to hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), and hh3,lh3,-e3(1s) transitions, as well as features due to quantum dotes (QDs) formed at the interface of nanolayers and the buffer. The contours of reflectance and absorption spectra are calculated with a single-oscillator, and many-oscillator models. The oscillator strength and the damping parameter are estimated for the optical transitions in QWs and QDs. The radiative life time of the exciton in a QW and a QD was found to be τо = (2Г0)-1 = 2x10-12 s.
format	article
author	Sîrbu, Nicolae Dorogan, Andrei Dorogan, Valerian Vieru, Tatiana Ursachi, Veaceslav Zalamai, Victor
author_facet	Sîrbu, Nicolae Dorogan, Andrei Dorogan, Valerian Vieru, Tatiana Ursachi, Veaceslav Zalamai, Victor
author_sort	Sîrbu, Nicolae
title	Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
title_short	Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
title_full	Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
title_fullStr	Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
title_full_unstemmed	Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
title_sort	interband optical transitions in the region of exciton resonances in in0.3ga0.7as/gaas quantum wells
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/b43bfd6c2c7b4773a9a6d795c3723080
work_keys_str_mv	AT sirbunicolae interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells AT doroganandrei interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells AT doroganvalerian interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells AT vierutatiana interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells AT ursachiveaceslav interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells AT zalamaivictor interbandopticaltransitionsintheregionofexcitonresonancesinin03ga07asgaasquantumwells
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Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells

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