Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells
Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/b43bfd6c2c7b4773a9a6d795c3723080 |
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