Stable Field Emission from Vertically Oriented SiC Nanoarrays

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jianfeng Xiao, Jiuzhou Zhao, Guanjiang Liu, Mattew Thomas Cole, Shenghan Zhou, Ke Chen, Xinchuan Liu, Zhenjun Li, Chi Li, Qing Dai
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon carbide one-dimensional nanomaterials nanoarrays field emission Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/b46dfd825cd849e8a0455cf268eb5370
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:b46dfd825cd849e8a0455cf268eb5370
record_format	dspace
spelling	oai:doaj.org-article:b46dfd825cd849e8a0455cf268eb53702021-11-25T18:31:49ZStable Field Emission from Vertically Oriented SiC Nanoarrays10.3390/nano111130252079-4991https://doaj.org/article/b46dfd825cd849e8a0455cf268eb53702021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3025https://doaj.org/toc/2079-4991Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >10<sup>7</sup> mm<sup>−2</sup> and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm<sup>−1</sup> and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.Jianfeng XiaoJiuzhou ZhaoGuanjiang LiuMattew Thomas ColeShenghan ZhouKe ChenXinchuan LiuZhenjun LiChi LiQing DaiMDPI AGarticlesilicon carbideone-dimensional nanomaterialsnanoarraysfield emissionChemistryQD1-999ENNanomaterials, Vol 11, Iss 3025, p 3025 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon carbide one-dimensional nanomaterials nanoarrays field emission Chemistry QD1-999
spellingShingle	silicon carbide one-dimensional nanomaterials nanoarrays field emission Chemistry QD1-999 Jianfeng Xiao Jiuzhou Zhao Guanjiang Liu Mattew Thomas Cole Shenghan Zhou Ke Chen Xinchuan Liu Zhenjun Li Chi Li Qing Dai Stable Field Emission from Vertically Oriented SiC Nanoarrays
description	Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >10<sup>7</sup> mm<sup>−2</sup> and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm<sup>−1</sup> and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.
format	article
author	Jianfeng Xiao Jiuzhou Zhao Guanjiang Liu Mattew Thomas Cole Shenghan Zhou Ke Chen Xinchuan Liu Zhenjun Li Chi Li Qing Dai
author_facet	Jianfeng Xiao Jiuzhou Zhao Guanjiang Liu Mattew Thomas Cole Shenghan Zhou Ke Chen Xinchuan Liu Zhenjun Li Chi Li Qing Dai
author_sort	Jianfeng Xiao
title	Stable Field Emission from Vertically Oriented SiC Nanoarrays
title_short	Stable Field Emission from Vertically Oriented SiC Nanoarrays
title_full	Stable Field Emission from Vertically Oriented SiC Nanoarrays
title_fullStr	Stable Field Emission from Vertically Oriented SiC Nanoarrays
title_full_unstemmed	Stable Field Emission from Vertically Oriented SiC Nanoarrays
title_sort	stable field emission from vertically oriented sic nanoarrays
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/b46dfd825cd849e8a0455cf268eb5370
work_keys_str_mv	AT jianfengxiao stablefieldemissionfromverticallyorientedsicnanoarrays AT jiuzhouzhao stablefieldemissionfromverticallyorientedsicnanoarrays AT guanjiangliu stablefieldemissionfromverticallyorientedsicnanoarrays AT mattewthomascole stablefieldemissionfromverticallyorientedsicnanoarrays AT shenghanzhou stablefieldemissionfromverticallyorientedsicnanoarrays AT kechen stablefieldemissionfromverticallyorientedsicnanoarrays AT xinchuanliu stablefieldemissionfromverticallyorientedsicnanoarrays AT zhenjunli stablefieldemissionfromverticallyorientedsicnanoarrays AT chili stablefieldemissionfromverticallyorientedsicnanoarrays AT qingdai stablefieldemissionfromverticallyorientedsicnanoarrays
_version_	1718411039311134720

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Ejemplares similares