Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics
Existing n-type colloidal quantum dot materials easily lose their doping polarity in air. Here Song et al. passivate the reactive covalent surface of indium arsenide quantum dots to gain the energy-level tunability and show p–n junction type solar cells with 7.92% certified efficiency.
Guardado en:
Autores principales: | Jung Hoon Song, Hyekyoung Choi, Hien Thu Pham, Sohee Jeong |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/b48136cfed6f492aaf59ba9359710461 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared
por: Daniel Franke, et al.
Publicado: (2016) -
Supersonically Spray-Coated Colloidal Quantum Dot Ink Solar Cells
por: Hyekyoung Choi, et al.
Publicado: (2017) -
Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics
por: Min-Jae Choi, et al.
Publicado: (2020) -
Observation of the 4π-periodic Josephson effect in indium arsenide nanowires
por: Dominique Laroche, et al.
Publicado: (2019) -
Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification
por: Daniel M. Kroupa, et al.
Publicado: (2017)