Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

Abstract Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors accord...

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Autores principales:	Tae Yeon Kim, Sungho Park, Byung Jun Kim, Su Been Heo, Jong Hun Yu, Jae Seung Shin, Jong-Am Hong, Beom-Su Kim, Young Duck Kim, Yongsup Park, Seong Jun Kang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b48c0ef7fbec405cade66cd5f3914c39
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spelling	oai:doaj.org-article:b48c0ef7fbec405cade66cd5f3914c392021-12-02T15:23:38ZDual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer10.1038/s41598-021-81480-52045-2322https://doaj.org/article/b48c0ef7fbec405cade66cd5f3914c392021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-81480-5https://doaj.org/toc/2045-2322Abstract Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.Tae Yeon KimSungho ParkByung Jun KimSu Been HeoJong Hun YuJae Seung ShinJong-Am HongBeom-Su KimYoung Duck KimYongsup ParkSeong Jun KangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tae Yeon Kim Sungho Park Byung Jun Kim Su Been Heo Jong Hun Yu Jae Seung Shin Jong-Am Hong Beom-Su Kim Young Duck Kim Yongsup Park Seong Jun Kang Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
description	Abstract Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.
format	article
author	Tae Yeon Kim Sungho Park Byung Jun Kim Su Been Heo Jong Hun Yu Jae Seung Shin Jong-Am Hong Beom-Su Kim Young Duck Kim Yongsup Park Seong Jun Kang
author_facet	Tae Yeon Kim Sungho Park Byung Jun Kim Su Been Heo Jong Hun Yu Jae Seung Shin Jong-Am Hong Beom-Su Kim Young Duck Kim Yongsup Park Seong Jun Kang
author_sort	Tae Yeon Kim
title	Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
title_short	Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
title_full	Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
title_fullStr	Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
title_full_unstemmed	Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
title_sort	dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b48c0ef7fbec405cade66cd5f3914c39
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Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

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