Transport properties of Cu2ZnSnS4
Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the...
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| Auteurs principaux: | , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/b4eee18983ec43598457a37fceab78c7 |
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| Résumé: | Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated. |
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