Transport properties of Cu2ZnSnS4

Transport properties of Cu2ZnSnS4

Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the...

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Bibliographic Details
Main Authors: Guc, Maxim, Lisunov, Constantin, Nateprov, Alexandr, Levcenco, Sergiu, Tezlevan, Victor, Aruşanov, Ernest
Format: article
Language:EN
Published: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Subjects:
Physics
QC1-999
Electronics
TK7800-8360
Online Access:https://doaj.org/article/b4eee18983ec43598457a37fceab78c7
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Summary:Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.

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