Transport properties of Cu2ZnSnS4

Transport properties of Cu2ZnSnS4

Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the...

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Autores principales: Guc, Maxim, Lisunov, Constantin, Nateprov, Alexandr, Levcenco, Sergiu, Tezlevan, Victor, Aruşanov, Ernest
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/b4eee18983ec43598457a37fceab78c7
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spelling oai:doaj.org-article:b4eee18983ec43598457a37fceab78c72021-11-21T12:01:37Z Transport properties of Cu2ZnSnS42537-63651810-648Xhttps://doaj.org/article/b4eee18983ec43598457a37fceab78c72012-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/18993https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.Guc, MaximLisunov, ConstantinNateprov, AlexandrLevcenco, SergiuTezlevan, VictorAruşanov, ErnestD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 1-2, Pp 41-51 (2012)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Guc, Maxim
Lisunov, Constantin
Nateprov, Alexandr
Levcenco, Sergiu
Tezlevan, Victor
Aruşanov, Ernest
Transport properties of Cu2ZnSnS4
description Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the experimental data yields relative acceptor concentration values. In addition, the values of dielectric permittivity, width of the acceptor band, and density of the localized states are estimated.
format article
author Guc, Maxim
Lisunov, Constantin
Nateprov, Alexandr
Levcenco, Sergiu
Tezlevan, Victor
Aruşanov, Ernest
author_facet Guc, Maxim
Lisunov, Constantin
Nateprov, Alexandr
Levcenco, Sergiu
Tezlevan, Victor
Aruşanov, Ernest
author_sort Guc, Maxim
title Transport properties of Cu2ZnSnS4
title_short Transport properties of Cu2ZnSnS4
title_full Transport properties of Cu2ZnSnS4
title_fullStr Transport properties of Cu2ZnSnS4
title_full_unstemmed Transport properties of Cu2ZnSnS4
title_sort transport properties of cu2znsns4
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2012
url https://doaj.org/article/b4eee18983ec43598457a37fceab78c7
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AT lisunovconstantin transportpropertiesofcu2znsns4
AT nateprovalexandr transportpropertiesofcu2znsns4
AT levcencosergiu transportpropertiesofcu2znsns4
AT tezlevanvictor transportpropertiesofcu2znsns4
AT arusanovernest transportpropertiesofcu2znsns4
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