Transport properties of Cu2ZnSnS4

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Transport properties of Cu2ZnSnS4

Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the...

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Détails bibliographiques
Auteurs principaux:	Guc, Maxim, Lisunov, Constantin, Nateprov, Alexandr, Levcenco, Sergiu, Tezlevan, Victor, Aruşanov, Ernest
Format:	article
Langue:	EN
Publié:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Sujets:	Physics QC1-999 Electronics TK7800-8360
Accès en ligne:	https://doaj.org/article/b4eee18983ec43598457a37fceab78c7
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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