Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes

Abstracts Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of...

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Autores principales: Sung-Min Jung, Tae Hoon Lee, Sang Yun Bang, Soo Deok Han, Dong-Wook Shin, Sanghyo Lee, Hyung Woo Choi, Yo-Han Suh, Xiang-Bing Fan, Jeong-Wan Jo, Shijie Zhan, Jiajie Yang, Chatura Samarakoon, Yoonwoo Kim, Luigi G. Occhipinti, Gehan Amaratunga, Jong Min Kim
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/b5a1e8a8ae7c4555b472795911191eb7
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spelling oai:doaj.org-article:b5a1e8a8ae7c4555b472795911191eb72021-12-02T18:46:59ZModelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes10.1038/s41524-021-00591-92057-3960https://doaj.org/article/b5a1e8a8ae7c4555b472795911191eb72021-07-01T00:00:00Zhttps://doi.org/10.1038/s41524-021-00591-9https://doaj.org/toc/2057-3960Abstracts Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.Sung-Min JungTae Hoon LeeSang Yun BangSoo Deok HanDong-Wook ShinSanghyo LeeHyung Woo ChoiYo-Han SuhXiang-Bing FanJeong-Wan JoShijie ZhanJiajie YangChatura SamarakoonYoonwoo KimLuigi G. OcchipintiGehan AmaratungaJong Min KimNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 7, Iss 1, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Computer software
QA76.75-76.765
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Computer software
QA76.75-76.765
Sung-Min Jung
Tae Hoon Lee
Sang Yun Bang
Soo Deok Han
Dong-Wook Shin
Sanghyo Lee
Hyung Woo Choi
Yo-Han Suh
Xiang-Bing Fan
Jeong-Wan Jo
Shijie Zhan
Jiajie Yang
Chatura Samarakoon
Yoonwoo Kim
Luigi G. Occhipinti
Gehan Amaratunga
Jong Min Kim
Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
description Abstracts Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.
format article
author Sung-Min Jung
Tae Hoon Lee
Sang Yun Bang
Soo Deok Han
Dong-Wook Shin
Sanghyo Lee
Hyung Woo Choi
Yo-Han Suh
Xiang-Bing Fan
Jeong-Wan Jo
Shijie Zhan
Jiajie Yang
Chatura Samarakoon
Yoonwoo Kim
Luigi G. Occhipinti
Gehan Amaratunga
Jong Min Kim
author_facet Sung-Min Jung
Tae Hoon Lee
Sang Yun Bang
Soo Deok Han
Dong-Wook Shin
Sanghyo Lee
Hyung Woo Choi
Yo-Han Suh
Xiang-Bing Fan
Jeong-Wan Jo
Shijie Zhan
Jiajie Yang
Chatura Samarakoon
Yoonwoo Kim
Luigi G. Occhipinti
Gehan Amaratunga
Jong Min Kim
author_sort Sung-Min Jung
title Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
title_short Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
title_full Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
title_fullStr Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
title_full_unstemmed Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
title_sort modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/b5a1e8a8ae7c4555b472795911191eb7
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