Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers

Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers

An ideal n-i-p perovskite solar cell employing a Pb free CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole tra...

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Autores principales: M. Mottakin, K. Sobayel, Dilip Sarkar, Hend Alkhammash, Sami Alharthi, Kuaanan Techato, Md. Shahiduzzaman, Nowshad Amin, Kamaruzzaman Sopian, Md. Akhtaruzzaman
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>
CuO
HTL
WO<sub>3</sub>
perovskite
SCAPS-1D
Technology
T
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spelling oai:doaj.org-article:b5b05d2c0cf04806a44e1b6d99271e0c2021-11-11T15:58:11ZDesign and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers10.3390/en142172001996-1073https://doaj.org/article/b5b05d2c0cf04806a44e1b6d99271e0c2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7200https://doaj.org/toc/1996-1073An ideal n-i-p perovskite solar cell employing a Pb free CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in V<sub>oc</sub>, PCE decreases with temperature. Defect tolerance limit for IL1 is 10<sup>13</sup> cm<sup>−3</sup>, 10<sup>16</sup> cm<sup>−3</sup> and 10<sup>12</sup> cm<sup>−3</sup> for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 10<sup>14</sup> cm<sup>−3</sup>. With the proposed device structure FTO/PCBM/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO shows the maximum efficiency of 25.45% (V<sub>oc</sub> = 0.97 V, J<sub>sc</sub> = 35.19 mA/cm<sup>2</sup>, FF = 74.38%), for the structure FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO the best PCE is obtained 26.92% (V<sub>oc</sub> = 0.99 V, J<sub>sc</sub> = 36.81 mA/cm<sup>2</sup>, FF = 73.80%) and device structure of FTO/WO<sub>3</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO gives the maximum efficiency 24.57% (V<sub>oc</sub> = 0.90 V, J<sub>sc</sub> = 36.73 mA/cm<sup>2</sup>, FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO system provides better performance and better defect tolerance capacity.M. MottakinK. SobayelDilip SarkarHend AlkhammashSami AlharthiKuaanan TechatoMd. ShahiduzzamanNowshad AminKamaruzzaman SopianMd. AkhtaruzzamanMDPI AGarticleCH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>CuOHTLWO<sub>3</sub>perovskiteSCAPS-1DTechnologyTENEnergies, Vol 14, Iss 7200, p 7200 (2021)
institution DOAJ
collection DOAJ
language EN
topic CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>
CuO
HTL
WO<sub>3</sub>
perovskite
SCAPS-1D
Technology
T
spellingShingle CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>
CuO
HTL
WO<sub>3</sub>
perovskite
SCAPS-1D
Technology
T
M. Mottakin
K. Sobayel
Dilip Sarkar
Hend Alkhammash
Sami Alharthi
Kuaanan Techato
Md. Shahiduzzaman
Nowshad Amin
Kamaruzzaman Sopian
Md. Akhtaruzzaman
Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
description An ideal n-i-p perovskite solar cell employing a Pb free CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in V<sub>oc</sub>, PCE decreases with temperature. Defect tolerance limit for IL1 is 10<sup>13</sup> cm<sup>−3</sup>, 10<sup>16</sup> cm<sup>−3</sup> and 10<sup>12</sup> cm<sup>−3</sup> for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 10<sup>14</sup> cm<sup>−3</sup>. With the proposed device structure FTO/PCBM/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO shows the maximum efficiency of 25.45% (V<sub>oc</sub> = 0.97 V, J<sub>sc</sub> = 35.19 mA/cm<sup>2</sup>, FF = 74.38%), for the structure FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO the best PCE is obtained 26.92% (V<sub>oc</sub> = 0.99 V, J<sub>sc</sub> = 36.81 mA/cm<sup>2</sup>, FF = 73.80%) and device structure of FTO/WO<sub>3</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO gives the maximum efficiency 24.57% (V<sub>oc</sub> = 0.90 V, J<sub>sc</sub> = 36.73 mA/cm<sup>2</sup>, FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/CuO system provides better performance and better defect tolerance capacity.
format article
author M. Mottakin
K. Sobayel
Dilip Sarkar
Hend Alkhammash
Sami Alharthi
Kuaanan Techato
Md. Shahiduzzaman
Nowshad Amin
Kamaruzzaman Sopian
Md. Akhtaruzzaman
author_facet M. Mottakin
K. Sobayel
Dilip Sarkar
Hend Alkhammash
Sami Alharthi
Kuaanan Techato
Md. Shahiduzzaman
Nowshad Amin
Kamaruzzaman Sopian
Md. Akhtaruzzaman
author_sort M. Mottakin
title Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
title_short Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
title_full Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
title_fullStr Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
title_full_unstemmed Design and Modelling of Eco-Friendly CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>-Based Perovskite Solar Cells with Suitable Transport Layers
title_sort design and modelling of eco-friendly ch<sub>3</sub>nh<sub>3</sub>sni<sub>3</sub>-based perovskite solar cells with suitable transport layers
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/b5b05d2c0cf04806a44e1b6d99271e0c
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_version_ 1718432436169211904

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