Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process

In this work, we investigated the porosity distribution and separation property of the porous crystal layer formed via the polythermal process. The proposed porosity distribution model, considering both the cooling profile and the crystal settling effect, provided simulative results that met the MRI...

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Autores principales: Yingshuang Meng, Zhonghua Li, Xiangcun Li, Wu Xiao, Gaohong He, Xuemei Wu, Xiaobin Jiang
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Lenguaje:EN
Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:b5ba798865f64128b6892349759f71302021-11-25T17:18:35ZPorosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process10.3390/cryst111113472073-4352https://doaj.org/article/b5ba798865f64128b6892349759f71302021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1347https://doaj.org/toc/2073-4352In this work, we investigated the porosity distribution and separation property of the porous crystal layer formed via the polythermal process. The proposed porosity distribution model, considering both the cooling profile and the crystal settling effect, provided simulative results that met the MRI analysis experimental results with suitable agreement. Significant porosity variation from the top to the bottom of the crystal layer (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>ϕ</mi></semantics></math></inline-formula> from 0.75 to 0.55 under rapid cooling profile) was detected. Meanwhile, the vertical supersaturation degree gradient induced by the fluid fluctuation could impact nucleation and crystal growth kinetic along with crystal particle settling. The resulting crystal layer possessed various impurity inclusion conditions. Under a moderate cooling profile (0.4 K·min<sup>−1</sup>), the volume fraction of closed pores against overall pores decreased from 0.75 to 0.36. The proposed model and experimental analysis approach were demonstrated to be helpful for porosity distribution simulation and impure inclusion analysis of layer crystallization.Yingshuang MengZhonghua LiXiangcun LiWu XiaoGaohong HeXuemei WuXiaobin JiangMDPI AGarticlecrystallizationmathematical modelingporous mediasimulation processseparation techniquesCrystallographyQD901-999ENCrystals, Vol 11, Iss 1347, p 1347 (2021)
institution DOAJ
collection DOAJ
language EN
topic crystallization
mathematical modeling
porous media
simulation process
separation techniques
Crystallography
QD901-999
spellingShingle crystallization
mathematical modeling
porous media
simulation process
separation techniques
Crystallography
QD901-999
Yingshuang Meng
Zhonghua Li
Xiangcun Li
Wu Xiao
Gaohong He
Xuemei Wu
Xiaobin Jiang
Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
description In this work, we investigated the porosity distribution and separation property of the porous crystal layer formed via the polythermal process. The proposed porosity distribution model, considering both the cooling profile and the crystal settling effect, provided simulative results that met the MRI analysis experimental results with suitable agreement. Significant porosity variation from the top to the bottom of the crystal layer (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>ϕ</mi></semantics></math></inline-formula> from 0.75 to 0.55 under rapid cooling profile) was detected. Meanwhile, the vertical supersaturation degree gradient induced by the fluid fluctuation could impact nucleation and crystal growth kinetic along with crystal particle settling. The resulting crystal layer possessed various impurity inclusion conditions. Under a moderate cooling profile (0.4 K·min<sup>−1</sup>), the volume fraction of closed pores against overall pores decreased from 0.75 to 0.36. The proposed model and experimental analysis approach were demonstrated to be helpful for porosity distribution simulation and impure inclusion analysis of layer crystallization.
format article
author Yingshuang Meng
Zhonghua Li
Xiangcun Li
Wu Xiao
Gaohong He
Xuemei Wu
Xiaobin Jiang
author_facet Yingshuang Meng
Zhonghua Li
Xiangcun Li
Wu Xiao
Gaohong He
Xuemei Wu
Xiaobin Jiang
author_sort Yingshuang Meng
title Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
title_short Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
title_full Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
title_fullStr Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
title_full_unstemmed Porosity Distribution Simulation and Impure Inclusion Analysis of Porous Crystal Layer Formed via Polythermal Process
title_sort porosity distribution simulation and impure inclusion analysis of porous crystal layer formed via polythermal process
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/b5ba798865f64128b6892349759f7130
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AT xiangcunli porositydistributionsimulationandimpureinclusionanalysisofporouscrystallayerformedviapolythermalprocess
AT wuxiao porositydistributionsimulationandimpureinclusionanalysisofporouscrystallayerformedviapolythermalprocess
AT gaohonghe porositydistributionsimulationandimpureinclusionanalysisofporouscrystallayerformedviapolythermalprocess
AT xuemeiwu porositydistributionsimulationandimpureinclusionanalysisofporouscrystallayerformedviapolythermalprocess
AT xiaobinjiang porositydistributionsimulationandimpureinclusionanalysisofporouscrystallayerformedviapolythermalprocess
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