Simulation of infrared spectra of trace impurities in silicon wafers based on the multiple transmission–reflection infrared method
Abstract The content of trace impurities, such as interstitial oxygen and substitutional carbon, in silicon is crucial in determining the mechanical and physical characteristics of silicon wafers. The traditional infrared (IR) method is adopted as a normal means to analyse their concentration at hom...
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| Formato: | article |
| Lenguaje: | EN |
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Nature Portfolio
2021
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| Acceso en línea: | https://doaj.org/article/b5cee478f81a43bd8a1f0c4cff8ff70a |
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