Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films

Control of the directional photocurrent by polarized light in topological insulators may enable topological spintronics but is not yet well understood. Here the authors demonstrate that the directional photocurrent is due to the asymmetric optical transitions between topological surface states and b...

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Autores principales: Yu Pan, Qing-Ze Wang, Andrew L. Yeats, Timothy Pillsbury, Thomas C. Flanagan, Anthony Richardella, Haijun Zhang, David D. Awschalom, Chao-Xing Liu, Nitin Samarth
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/b6ad5a770d51468185a2689fb7fcf477
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spelling oai:doaj.org-article:b6ad5a770d51468185a2689fb7fcf4772021-12-02T14:40:59ZHelicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films10.1038/s41467-017-00711-42041-1723https://doaj.org/article/b6ad5a770d51468185a2689fb7fcf4772017-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00711-4https://doaj.org/toc/2041-1723Control of the directional photocurrent by polarized light in topological insulators may enable topological spintronics but is not yet well understood. Here the authors demonstrate that the directional photocurrent is due to the asymmetric optical transitions between topological surface states and bulk states.Yu PanQing-Ze WangAndrew L. YeatsTimothy PillsburyThomas C. FlanaganAnthony RichardellaHaijun ZhangDavid D. AwschalomChao-Xing LiuNitin SamarthNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Yu Pan
Qing-Ze Wang
Andrew L. Yeats
Timothy Pillsbury
Thomas C. Flanagan
Anthony Richardella
Haijun Zhang
David D. Awschalom
Chao-Xing Liu
Nitin Samarth
Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
description Control of the directional photocurrent by polarized light in topological insulators may enable topological spintronics but is not yet well understood. Here the authors demonstrate that the directional photocurrent is due to the asymmetric optical transitions between topological surface states and bulk states.
format article
author Yu Pan
Qing-Ze Wang
Andrew L. Yeats
Timothy Pillsbury
Thomas C. Flanagan
Anthony Richardella
Haijun Zhang
David D. Awschalom
Chao-Xing Liu
Nitin Samarth
author_facet Yu Pan
Qing-Ze Wang
Andrew L. Yeats
Timothy Pillsbury
Thomas C. Flanagan
Anthony Richardella
Haijun Zhang
David D. Awschalom
Chao-Xing Liu
Nitin Samarth
author_sort Yu Pan
title Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
title_short Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
title_full Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
title_fullStr Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
title_full_unstemmed Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
title_sort helicity dependent photocurrent in electrically gated (bi1−x sb x )2te3 thin films
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/b6ad5a770d51468185a2689fb7fcf477
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