Study the Structure Properties of Semiconductor Film Multilayered

In this research was study the effect of increasing the number of layers of the semiconductor films as PbS on the average grain sizes and illustrate the relationship between the increase in the average grain size and thickness of the membrane, and membrane was prepared using the easy and simple and...

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Autores principales: Hind Basil Al-Atraqji, Hanaa Arer Al.Kaisy
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Lenguaje:EN
Publicado: Al-Khwarizmi College of Engineering – University of Baghdad 2010
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Acceso en línea:https://doaj.org/article/b6cb816335ea48678f7ac021202e356b
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spelling oai:doaj.org-article:b6cb816335ea48678f7ac021202e356b2021-12-02T07:16:38ZStudy the Structure Properties of Semiconductor Film Multilayered1818-11712312-0789https://doaj.org/article/b6cb816335ea48678f7ac021202e356b2010-06-01T00:00:00Zhttp://alkej.uobaghdad.edu.iq/index.php/alkej/article/view/492https://doaj.org/toc/1818-1171https://doaj.org/toc/2312-0789 In this research was study the effect of increasing the number of layers of the semiconductor films as PbS on the average grain sizes and illustrate the relationship between the increase in the average grain size and thickness of the membrane, and membrane was prepared using the easy and simple and does not need the complexity of which is that the chemical bath , and from an X-ray diffraction found that the material and the installation of a random cubic and when increasing the number of layers deposited note the emergence of a number of vertices of a substance and PbS at different levels but the level is more severe (200) as well as the value is calculated optical energy gap and found to be not affected by increase thickness and from this value can be determined  the  applications of semiconductor materials and elected on the basis of Article absorbed optical radiation that incident on them. Hind Basil Al-AtraqjiHanaa Arer Al.KaisyAl-Khwarizmi College of Engineering – University of BaghdadarticleChemical engineeringTP155-156Engineering (General). Civil engineering (General)TA1-2040ENAl-Khawarizmi Engineering Journal, Vol 6, Iss 2 (2010)
institution DOAJ
collection DOAJ
language EN
topic Chemical engineering
TP155-156
Engineering (General). Civil engineering (General)
TA1-2040
spellingShingle Chemical engineering
TP155-156
Engineering (General). Civil engineering (General)
TA1-2040
Hind Basil Al-Atraqji
Hanaa Arer Al.Kaisy
Study the Structure Properties of Semiconductor Film Multilayered
description In this research was study the effect of increasing the number of layers of the semiconductor films as PbS on the average grain sizes and illustrate the relationship between the increase in the average grain size and thickness of the membrane, and membrane was prepared using the easy and simple and does not need the complexity of which is that the chemical bath , and from an X-ray diffraction found that the material and the installation of a random cubic and when increasing the number of layers deposited note the emergence of a number of vertices of a substance and PbS at different levels but the level is more severe (200) as well as the value is calculated optical energy gap and found to be not affected by increase thickness and from this value can be determined  the  applications of semiconductor materials and elected on the basis of Article absorbed optical radiation that incident on them.
format article
author Hind Basil Al-Atraqji
Hanaa Arer Al.Kaisy
author_facet Hind Basil Al-Atraqji
Hanaa Arer Al.Kaisy
author_sort Hind Basil Al-Atraqji
title Study the Structure Properties of Semiconductor Film Multilayered
title_short Study the Structure Properties of Semiconductor Film Multilayered
title_full Study the Structure Properties of Semiconductor Film Multilayered
title_fullStr Study the Structure Properties of Semiconductor Film Multilayered
title_full_unstemmed Study the Structure Properties of Semiconductor Film Multilayered
title_sort study the structure properties of semiconductor film multilayered
publisher Al-Khwarizmi College of Engineering – University of Baghdad
publishDate 2010
url https://doaj.org/article/b6cb816335ea48678f7ac021202e356b
work_keys_str_mv AT hindbasilalatraqji studythestructurepropertiesofsemiconductorfilmmultilayered
AT hanaaareralkaisy studythestructurepropertiesofsemiconductorfilmmultilayered
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