Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

Abstract Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °...

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Autores principales:	Myungwoo Son, Jaewon Jang, Yongsu Lee, Jungtae Nam, Jun Yeon Hwang, In S. Kim, Byoung Hun Lee, Moon-Ho Ham, Sang-Soo Chee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/b71774a18332445bb60385234589c3fe
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spelling	oai:doaj.org-article:b71774a18332445bb60385234589c3fe2021-12-02T15:51:00ZCopper-graphene heterostructure for back-end-of-line compatible high-performance interconnects10.1038/s41699-021-00216-12397-7132https://doaj.org/article/b71774a18332445bb60385234589c3fe2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00216-1https://doaj.org/toc/2397-7132Abstract Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).Myungwoo SonJaewon JangYongsu LeeJungtae NamJun Yeon HwangIn S. KimByoung Hun LeeMoon-Ho HamSang-Soo CheeNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Myungwoo Son Jaewon Jang Yongsu Lee Jungtae Nam Jun Yeon Hwang In S. Kim Byoung Hun Lee Moon-Ho Ham Sang-Soo Chee Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
description	Abstract Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).
format	article
author	Myungwoo Son Jaewon Jang Yongsu Lee Jungtae Nam Jun Yeon Hwang In S. Kim Byoung Hun Lee Moon-Ho Ham Sang-Soo Chee
author_facet	Myungwoo Son Jaewon Jang Yongsu Lee Jungtae Nam Jun Yeon Hwang In S. Kim Byoung Hun Lee Moon-Ho Ham Sang-Soo Chee
author_sort	Myungwoo Son
title	Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
title_short	Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
title_full	Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
title_fullStr	Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
title_full_unstemmed	Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
title_sort	copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b71774a18332445bb60385234589c3fe
work_keys_str_mv	AT myungwooson coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT jaewonjang coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT yongsulee coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT jungtaenam coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT junyeonhwang coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT inskim coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT byounghunlee coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT moonhoham coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects AT sangsoochee coppergrapheneheterostructureforbackendoflinecompatiblehighperformanceinterconnects
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Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

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