Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

The electronic band structure of van der Waals crystals is strongly sensitive to the number of layers. Here, the authors observe a thickness-dependent metal-to-semiconductor transition in layered PtSe2 by means of electrical transport measurements.

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Autores principales:	Alberto Ciarrocchi, Ahmet Avsar, Dmitry Ovchinnikov, Andras Kis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b7506d06925d4c1b853450cb9ef73094
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id	oai:doaj.org-article:b7506d06925d4c1b853450cb9ef73094
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spelling	oai:doaj.org-article:b7506d06925d4c1b853450cb9ef730942021-12-02T14:39:07ZThickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide10.1038/s41467-018-03436-02041-1723https://doaj.org/article/b7506d06925d4c1b853450cb9ef730942018-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03436-0https://doaj.org/toc/2041-1723The electronic band structure of van der Waals crystals is strongly sensitive to the number of layers. Here, the authors observe a thickness-dependent metal-to-semiconductor transition in layered PtSe2 by means of electrical transport measurements.Alberto CiarrocchiAhmet AvsarDmitry OvchinnikovAndras KisNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Alberto Ciarrocchi Ahmet Avsar Dmitry Ovchinnikov Andras Kis Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
description	The electronic band structure of van der Waals crystals is strongly sensitive to the number of layers. Here, the authors observe a thickness-dependent metal-to-semiconductor transition in layered PtSe2 by means of electrical transport measurements.
format	article
author	Alberto Ciarrocchi Ahmet Avsar Dmitry Ovchinnikov Andras Kis
author_facet	Alberto Ciarrocchi Ahmet Avsar Dmitry Ovchinnikov Andras Kis
author_sort	Alberto Ciarrocchi
title	Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
title_short	Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
title_full	Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
title_fullStr	Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
title_full_unstemmed	Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
title_sort	thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b7506d06925d4c1b853450cb9ef73094
work_keys_str_mv	AT albertociarrocchi thicknessmodulatedmetaltosemiconductortransformationinatransitionmetaldichalcogenide AT ahmetavsar thicknessmodulatedmetaltosemiconductortransformationinatransitionmetaldichalcogenide AT dmitryovchinnikov thicknessmodulatedmetaltosemiconductortransformationinatransitionmetaldichalcogenide AT andraskis thicknessmodulatedmetaltosemiconductortransformationinatransitionmetaldichalcogenide
_version_	1718390734383480832

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

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