Strain-engineered inverse charge-funnelling in layered semiconductors

The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.

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Autores principales:	Adolfo De Sanctis, Iddo Amit, Steven P. Hepplestone, Monica F. Craciun, Saverio Russo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b7d7b96b3771424897e253d4f2ef6184
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spelling	oai:doaj.org-article:b7d7b96b3771424897e253d4f2ef61842021-12-02T15:34:47ZStrain-engineered inverse charge-funnelling in layered semiconductors10.1038/s41467-018-04099-72041-1723https://doaj.org/article/b7d7b96b3771424897e253d4f2ef61842018-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04099-7https://doaj.org/toc/2041-1723The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.Adolfo De SanctisIddo AmitSteven P. HepplestoneMonica F. CraciunSaverio RussoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Adolfo De Sanctis Iddo Amit Steven P. Hepplestone Monica F. Craciun Saverio Russo Strain-engineered inverse charge-funnelling in layered semiconductors
description	The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
format	article
author	Adolfo De Sanctis Iddo Amit Steven P. Hepplestone Monica F. Craciun Saverio Russo
author_facet	Adolfo De Sanctis Iddo Amit Steven P. Hepplestone Monica F. Craciun Saverio Russo
author_sort	Adolfo De Sanctis
title	Strain-engineered inverse charge-funnelling in layered semiconductors
title_short	Strain-engineered inverse charge-funnelling in layered semiconductors
title_full	Strain-engineered inverse charge-funnelling in layered semiconductors
title_fullStr	Strain-engineered inverse charge-funnelling in layered semiconductors
title_full_unstemmed	Strain-engineered inverse charge-funnelling in layered semiconductors
title_sort	strain-engineered inverse charge-funnelling in layered semiconductors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b7d7b96b3771424897e253d4f2ef6184
work_keys_str_mv	AT adolfodesanctis strainengineeredinversechargefunnellinginlayeredsemiconductors AT iddoamit strainengineeredinversechargefunnellinginlayeredsemiconductors AT stevenphepplestone strainengineeredinversechargefunnellinginlayeredsemiconductors AT monicafcraciun strainengineeredinversechargefunnellinginlayeredsemiconductors AT saveriorusso strainengineeredinversechargefunnellinginlayeredsemiconductors
_version_	1718386740604960768

Strain-engineered inverse charge-funnelling in layered semiconductors

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